scholarly journals Double Swing Quiescent-Current: An Experimental Detection Method of Ferroelectricity in Very Leaky Dielectric Films

2020 ◽  
Vol 97 (1) ◽  
pp. 3-6
Author(s):  
Salvador Dueñas ◽  
Helena Castán ◽  
Óscar G. Ossorio ◽  
Guillermo Vinuesa ◽  
Héctor García ◽  
...  
2020 ◽  
Vol MA2020-01 (15) ◽  
pp. 1016-1016
Author(s):  
Salvador Dueñas ◽  
Helena Castán ◽  
Óscar G. Ossorio ◽  
Guillermo Vinuesa ◽  
Héctor García ◽  
...  

2005 ◽  
Vol 17 (3) ◽  
pp. 032104 ◽  
Author(s):  
R. V. Craster ◽  
O. K. Matar

2018 ◽  
Vol 57 (01) ◽  
pp. 1 ◽  
Author(s):  
Tong Wang ◽  
Tao Liu ◽  
Shuming Yang ◽  
Qiang Liu ◽  
Biyao Cheng

2020 ◽  
Vol 24 (05) ◽  
pp. 9-18
Author(s):  
Hilal Mohammed Mousa ◽  
◽  
Sadiq Salman Muhsun ◽  
Zainab Talib Al-Sharify ◽  
◽  
...  

Author(s):  
K. Pegg-Feige ◽  
F. W. Doane

Immunoelectron microscopy (IEM) applied to rapid virus diagnosis offers a more sensitive detection method than direct electron microscopy (DEM), and can also be used to serotype viruses. One of several IEM techniques is that introduced by Derrick in 1972, in which antiviral antibody is attached to the support film of an EM specimen grid. Originally developed for plant viruses, it has recently been applied to several animal viruses, especially rotaviruses. We have investigated the use of this solid phase IEM technique (SPIEM) in detecting and identifying enteroviruses (in the form of crude cell culture isolates), and have compared it with a modified “SPIEM-SPA” method in which grids are coated with protein A from Staphylococcus aureus prior to exposure to antiserum.


Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.


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