Electron microscopy studies of PZT ferroelectric film capacitor structures

1992 ◽  
Vol 50 (2) ◽  
pp. 1364-1365
Author(s):  
V. Kaushik ◽  
P. Maniar ◽  
J. Olowolafe ◽  
R. Jones ◽  
A. Campbell ◽  
...  
Keyword(s):  
Electric Fields ◽  
Sol Gel ◽  
Ferroelectric Material ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Lead Zirconium Titanate ◽  
Si Substrate ◽  
Film Capacitor ◽  
Pzt Films ◽  
High Dielectric

Lead zirconium titanate films (Pb (Zr,Ti) O3 or PZT) are being considered for potential application as dielectric films in memory technology due to their high dielectric constants. PZT is a ferroelectric material which shows spontaneous polarizability, reversible under applied electric fields. We report herein some results of TEM studies on thin film capacitor structures containing PZT films with platinum-titanium electrodes.The wafers had a stacked structure consisting of PZT/Pt/Ti/SiO2/Si substrate as shown in Figure 1. Platinum acts as electrode material and titanium is used to overcome the problem of platinum adhesion to the oxide layer. The PZT (0/20/80) films were deposited using a sol-gel method and the structure was annealed at 650°C and 800°C for 30 min in an oxygen ambient. XTEM imaging was done at 200KV with the electron beam parallel to <110> zone axis of silicon.Figure 2 shows the PZT and Pt layers only, since the structure had a tendency to peel off at the Ti-Pt interface during TEM sample preparation.

New Perovskite Nanomaterials and Their Integrations into High-k Dielectrics

2011 ◽  
Vol 2011 (CICMT) ◽  
pp. 000072-000077
Author(s):  
Minoru Osada ◽  
Takayoshi Sasaki
Keyword(s):  
Dielectric Properties ◽  
Room Temperature ◽  
Bottom Electrode ◽  
Dielectric Constants ◽  
Dielectric Films ◽  
Layered Perovskite ◽  
Layer By Layer ◽  
High K ◽  
High K Dielectric ◽  
High Dielectric

We report on a bottom-up manufacturing for high-k dielectric films using a novel nanomaterial, namely, a perovskite nanosheet (LaNb2O7) derived from a layered perovskite by exfoliation. Solution-based layer-by-layer assembly of perovskite nanosheets is effective for room-temperature fabrication of high-k nanocapacitors, which are directly assembled on a SrRuO3 bottom electrode with an atomically sharp interface. These nanocapacitors exhibit high dielectric constants (k &gt; 50) for thickness down to 5 nm while eliminating problems resulting from the size effect. We also investigate dielectric properties of perovskite nanosheets with different compositions (LaNb2O7, La0.95Eu0.05Nb2O7, and Eu0.56Ta2O7) in order to study the influence of A- and B-site modifications on dielectric properties.

Microstructure and Dielectric Properties of LixTixNi1-2xO Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 1817-1819
Author(s):  
Cui Hua Zhao ◽  
Bo Ping Zhang ◽  
Yong Liu ◽  
Song Jie Li
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Co Doping ◽  
Grain Sizes ◽  
Uniform Microstructure ◽  
Coating Method ◽  
High Dielectric

LixTixNi1-2xO (x =0, 10 and 20 at. %) thin films with 200 nm in thickness were deposited on Pt/Ti/SiO2/Si (100) by a sol-gel spin-coating method. All samples have a uniform microstructure. The grain sizes grew from 100 nm to 300 nm by co-doping Li and Ti. The LiTiNiO thin films consist of NiO, NiTiO3 and Li2NiO2, while the Li-free thin films consist of NiO, NiTiO3 and NiTi0.99O3. The dielectric properties of the LiTiNiO thin films improved obviously by co-doping Li and Ti, but excess Li increases the amount of Li2NiO2 phase and decreases the dielectric properties. The dielectric constants at 100 Hz for the Li0.1Ti0.1Ni0.8O and Li0.2Ti0.2Ni0.6O thin films are 506 and 388 respectively. Appropriate co-doping contents of Li and Ti are important to obtain a high dielectric property.

Rapid Thermal Processing of Ferroelectric Thin Films

1991 ◽  
Vol 224 ◽  
Author(s):  
Zheng Wu ◽  
Roberto Pascual ◽  
C.V.R. Vasant Kumar ◽  
David Amd ◽  
Michael Sayer
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Thermal Processing ◽  
Crystallization Behavior ◽  
Sol Gel ◽  
Rapid Thermal Processing ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Heating Rates ◽  
Pzt Films

AbstractThe preparation of ferroelectric lead zirconate titanate (PZT) thin films by rapid thermal processing (RTP) is reported. The films were deposited by chemical sol gel and physical sputter techniques. The heating rate of RTP was found to have significant influence on the crystallization behavior. Faster heating rates lead to lowering of the crystallization temperature and reduction of grain size. PZT films were obtained with dielectric constants ~ 1000, remanent polarizations between 20 and 30μC/cm2, coercive fields 20 to 60kV/cm, and no significant fatigue for 109 to 1010 stressing cycles.

HIGH DIELECTRIC PROPERTIES OF LOW-TEMPERATURE SINTERED (Ca0.5Cu0.5)TiO3 CERAMICS

2011 ◽  
Vol 01 (02) ◽  
pp. 203-207 ◽  
Author(s):  
JIAN-CONG YUAN ◽  
YUAN-HUA LIN ◽  
BO CHENG ◽  
CE-WEN NAN
Keyword(s):  
Dielectric Properties ◽  
Sintering Temperature ◽  
Sol Gel ◽  
Impedance Spectrum ◽  
Dielectric Constants ◽  
Sintering Process ◽  
Remarkable Effect ◽  
High Dielectric Permittivity ◽  
Wide Range ◽  
High Dielectric

High dielectric-permittivity ( Ca0.5Cu0.5)TiO3 -based ceramics have been prepared by a sol-gel method combined with a solid state sintering process. The results indicate that the additives of H3BO3 have a remarkable effect on the sintering temperature, microstructure and dielectric properties. High density ( Ca0.5Cu0.5)TiO3 bulk ceramics can be obtained after sintering at 900°C. The as-sintered ceramics show high dielectric constants (~1000), and low losses (~0.05). The dielectric properties are nearly independent of frequency and temperature in a wide range. The activation energy is calculated as about 0.50 eV by impedance spectrum method.

Ferroeleciric Thin Films Intended for Electronic Device Applications

1993 ◽  
Vol 310 ◽  
Author(s):  
A. Patel ◽  
E.A. Logan ◽  
R. Nicklin ◽  
N.B. Hasdell ◽  
R.W. Whatmore ◽  
...  
Keyword(s):  
Thin Films ◽  
Flip Chip ◽  
Electronic Device ◽  
Dielectric Material ◽  
Sol Gel ◽  
Deposition Process ◽  
Dielectric Constants ◽  
Excess Lead ◽  
Starting Solutions ◽  
High Dielectric

AbstractThe need for integrated ferroelectrics as charge storage capacitors has increased dramatically not only for use in radiation hardened and commercial non-volatile memories, but also as possible high dielectric material suitable for capacitor applications. These properties combined with a thin film format, offer the capability of forming very compact capacitor structures suitable for MCM applications through Flip-Chip Bonding, or even integrated directly onto MMIC's. In this paper, the material PbZrxTi1-xO3, where x=l, 0.53, and 0.60 has been assessed. Thin films were produced using a sol-gel technique onto metallised thermally oxidised silicon. The effects on film microstructure and crystallinity with variation in the deposition process will be described. The best films were obtained by incorporating excess lead in the starting solutions, and also by the addition of acetylacetone which was used as a solution modifier. It will be demonstrated that fully perovskite films can be readily obtained at temperatures as low as 450°C. The films were normally 0.3-0.44μm thick with grain sizes of the order of 0.2μm. These films exhibited dielectric constants and loss in the range 170-800 and 1-3% respectively. Measurements upto 3MHz, indicated useful performance with low dispersion. The measured Pr and Ec were in the range 16-22μC/cm2, and 60-120kV/cm respectively.

scholarly journals Solution-processed amorphous ZrO2 gate dielectric films synthesized by a non-hydrolytic sol–gel route

RSC Advances ◽  
2018 ◽  
Vol 8 (68) ◽  
pp. 39115-39119 ◽  
Author(s):  
Jong-Baek Seon ◽  
Nam-Kwang Cho ◽  
Gayeong Yoo ◽  
Youn Sang Kim ◽  
Kookheon Char
Keyword(s):  
Dielectric Constant ◽  
Zirconium Oxide ◽  
High Dielectric Constant ◽  
Gate Dielectric ◽  
Sol Gel ◽  
High Mobility ◽  
Dielectric Films ◽  
Solution Processed ◽  
High Dielectric ◽  
P Type

Solution-processed amorphous zirconium oxide (ZrO2) dielectrics were formed via a non-hydrolytic sol–gel route at low-temperature. The ZrO2 films exhibited a high dielectric constant and high mobility p-type pentacene TFTs were fabricated using them.

Pulsed Laser Deposition of High-Epsilon Dielectrics: PMN and PMN-PT

1992 ◽  
Vol 285 ◽  
Author(s):  
K.L. Saenger ◽  
R.A. Roy ◽  
D.B. Beach ◽  
K.F. Etzold
Keyword(s):  
Sol Gel ◽  
Pyrochlore Phase ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Thin Film Capacitors ◽  
Crystalline Films ◽  
Lead Magnesium ◽  
Krf Excimer Laser ◽  
Lead Magnesium Niobium Oxide ◽  
High Dielectric

ABSTRACTIn this study we report on the KrF excimer laser deposition of crystalline films of lead magnesium niobium oxide (PMN) and solid solutions of PMN and lead titanate (PT) in a 65:35 ratio. These materials have potential microelectronic applications as thin film capacitors due to their high dielectric constants (εPMN(bulk) ≥ 10,000). Films were typically deposited in an oxygen background at elevated substrate temperatures(Ts = 525 °C) on substrates of Pt(111)/SiO2/Si or Pt(111)/glass. The deposited films were characterized by Rutherford Backscattering Spectroscopy (RBS), x-ray diffraction, and capacitance/loss measurements. Films prepared from a nearlystoichiometric commercial PMN target were low in Mg and Pb and yielded only the low-c pyrochlore phase (measured εfilm ≃ 100), even after cx-situ annealing at temperatures up to 650°C. Films deposited from Pb,Mg-rich targets prepared by a sol-gel process (tailored to produce the desired film stoichiometry) contained mixtures of perovskite and pyrochlore, with typical r values of order 600–1200.

Ferroelectric Thin Films for Microactuator Applications

1991 ◽  
Vol 243 ◽  
Author(s):  
Jiayu Chen ◽  
K. R. Udayakumar ◽  
Keith G. Brooks ◽  
L. Eric. Cross
Keyword(s):  
Thin Films ◽  
Laser Interferometer ◽  
Breakdown Strength ◽  
Sol Gel ◽  
Dielectric Constants ◽  
Ferroelectric Thin Films ◽  
Electromechanical Properties ◽  
High Dielectric

AbstractFerroelectric thin films of PZT and PMN-PT were fabricated by the solgel spin-on technique. The films show high dielectric constants, polarization and breakdown strength values. Using a laser interferometer (ultradilatometer), the piezoelectric and electrostrictive coefficients of the films were measured. The results indicate that the sol-gel derived ferroelectric thin films have good electromechanical properties and can be used in rnicroactuator applications.

scholarly journals Structural, Morphological and Dielectric Studies of Sol Gel Derived Gd Doped SrTiO3-δ

2020 ◽  
Vol 7 ◽  
Keyword(s):  
Sol Gel ◽  
Lattice Parameter ◽  
Dielectric Constants ◽  
Dielectric Studies ◽  
Low Loss ◽  
Gadolinium Doping ◽  
Gel Technique ◽  
Cubic Structure ◽  
Xrd Patterns ◽  
High Dielectric

Gadolinium doped SrTiO3-δ i.e. Sr1-xGdxTiO3-δ for various values of ‘x’ have been successfully synthesized using sol gel technique in the reported work. XRD patterns of the obtained ceramics are found to be sharp and well defined having no impurity phases for all the compositions. Lattice parameter ‘a’ decreases with increase in the amount of Gadolinium. XRD, FESEM and EDX studies confirm the formation of Sr1-xGdxTiO3-δ ceramics with required cubic structure. FESEM/EDX analysis reveals that ceramics possess high density with marginal inter-granular porosity. The dielectric studies show that the synthesized samples possess high dielectric constants, high ac conductivity and low loss factors which further improve with gadolinium doping

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