Formation of High Aspect Ratio Macropore Array on p-Type Silicon

1999 ◽  
Vol 3 (10) ◽  
pp. 489 ◽  
Author(s):  
K. J. Chao
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Type Silicon ◽  
P Type

scholarly journals Ultrafast fabrication of high-aspect-ratio macropores in P-type silicon: toward the mass production of microdevices

2018 ◽  
Vol 6 (11) ◽  
pp. 648-654 ◽  
Author(s):  
Daohan Ge ◽  
Wenbing Li ◽  
Le Lu ◽  
Jinxiu Wei ◽  
Xiukang Huang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Mass Production ◽  
Type Silicon ◽  
P Type

Metal-assisted chemical etching for very high aspect ratio grooves inn-type silicon wafers

2014 ◽  
Vol 24 (12) ◽  
pp. 125026 ◽  
Author(s):  
Katherine Booker ◽  
Maureen Brauers ◽  
Erin Crisp ◽  
Shakir Rahman ◽  
Klaus Weber ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
Very High

Self-Peeling of Porous Nickel Foam from the Electrochemically Etched Porous Silicon

2005 ◽  
Vol 879 ◽  
Author(s):  
Xi Zhang ◽  
King-Ning Tu
Keyword(s):  
Elevated Temperature ◽  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Nickel Foam ◽  
Porous Nickel ◽  
Si Substrate ◽  
Aqueous Alkaline Solution ◽  
P Type ◽  
Very High ◽  
Sidewall Surface

AbstractA low-doped p-type silicon wafer was wet-etched to form macropores in a high-aspect-ratio, straight and parallel manner along the Si (100) direction. It was then plated in aqueous alkaline solution containing Ni2+. Metallic Ni was rapidly deposited in the macropores on the sidewall surface without using a reducing agent or activation treatment at slightly elevated temperature. After being immersed for certain duration, the single crystalline Si of sidewalls was replaced by polycrystalline Ni while the initial porous structure was still maintained. When Ni became dominant in the entire porous regime, the porous film more than 200 μm thick was discovered to be able to peel off very easily from the Si substrate beneath. In this way, a piece of nickel foam with straight pores of very high aspect ratio is self-formed and self-peeled.

Formation of High Aspect Ratio Macropore Array on N-Type Silicon

2013 ◽  
Vol 397-400 ◽  
pp. 47-51
Author(s):  
Guo Zheng Wang ◽  
Xiao Na Li ◽  
Feng Yuan Yu ◽  
Yao Zhang ◽  
Yong Zhao Liang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Light Source ◽  
Anionic Surfactant ◽  
High Aspect Ratio ◽  
Response Curve ◽  
Electrochemical Etching ◽  
Spectral Response ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Silicon Arrays

The fabrication of high aspect ratio macropore silicon arrays (MSA) on n-type silicon under optimum photo-electrochemical (PEC) etching (anodization) conditions was demonstrated. The depth of the MSA can reach 350 μm with an aspect ratio of more than 100. With the presence of AOS (a type of anionic surfactant) in the electrolyte, the pore walls solution is slowest, and is more suitable for the preparation of high aspect ratio n-type MSA. The etching voltage is critical for the formation of high aspect ratio MSA on n-type silicon. The relative spectral response curve was measured for silicon photo-electrochemical etching. An IR-LEDs (850 nm) array was proposed as light source for illumination of whole silicon wafers, which was proved available.

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