High-Aspect-Ratio Silicon Nanostructures on N-type Silicon Wafer Using Metal-Assisted Chemical Etching (MACE) Technique

2021 ◽  
Author(s):  
Nurul Huda Abdul Razak ◽  
Nowshad Amin ◽  
Tiong Sieh Kiong ◽  
Kamaruzzaman Sopian ◽  
Md. Akhtaruzzaman
Keyword(s):  
Aspect Ratio ◽  
Silicon Wafer ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Silicon Nanostructures ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching

Metal-assisted chemical etching for very high aspect ratio grooves inn-type silicon wafers

2014 ◽  
Vol 24 (12) ◽  
pp. 125026 ◽  
Author(s):  
Katherine Booker ◽  
Maureen Brauers ◽  
Erin Crisp ◽  
Shakir Rahman ◽  
Klaus Weber ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Silicon Wafers ◽  
Type Silicon ◽  
Metal Assisted Chemical Etching ◽  
Very High

Create High-Aspect-Ratio Silicon Nanostructures Using Metal-Assisted Chemical Etching (MACE) Technique

2021 ◽  
Author(s):  
Nurul Huda Abdul Razak ◽  
Nowshad Amin ◽  
Tiong Sieh Kiong ◽  
Kamaruzzaman Sopian ◽  
Md. Akhtaruzzaman
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Silicon Nanostructures ◽  
Metal Assisted Chemical Etching

scholarly journals Passivation of high aspect ratio silicon nanowires by using catalytic chemical vapor deposition for radial heterojunction solar cell application

RSC Advances ◽  
2017 ◽  
Vol 7 (71) ◽  
pp. 45101-45106 ◽  
Author(s):  
Gangqiang Dong ◽  
Yurong Zhou ◽  
Hailong Zhang ◽  
Fengzhen Liu ◽  
Guangyi Li ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Aspect Ratio ◽  
Silicon Nanowires ◽  
Vapor Deposition ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Chemical Vapor ◽  
Solar Cell Application ◽  
Catalytic Chemical Vapor Deposition ◽  
Metal Assisted Chemical Etching

High aspect ratio silicon nanowires (SiNWs) prepared by metal-assisted chemical etching were passivated by using catalytic chemical vapor deposition (Cat-CVD).

Wafer-Scale, Highly-Ordered Silicon Nanowires Produced by Step-and-Flash Imprint Lithography and Metal-Assisted Chemical Etching

2012 ◽  
Vol 1512 ◽  
Author(s):  
Jian-Wei Ho ◽  
Qixun Wee ◽  
Jarrett Dumond ◽  
Li Zhang ◽  
Keyan Zang ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Cross Sections ◽  
Silicon Nanowires ◽  
High Aspect Ratio ◽  
Chemical Etching ◽  
Semiconductor Device ◽  
Imprint Lithography ◽  
Wafer Level ◽  
Conventional Photolithography ◽  
Metal Assisted Chemical Etching

ABSTRACTA combinatory approach of Step-and-Flash Imprint Lithography (SFIL) and Metal-Assisted Chemical Etching (MacEtch) was used to generate near perfectly-ordered, high aspect ratio silicon nanowires (SiNWs) on 4" silicon wafers. The ordering and shapes of SiNWs depends only on the SFIL nanoimprinting mould used, thereby enabling arbitary SiNW patterns not possible with nanosphere and interference lithography (IL) to be generated. Very densely packed SiNWs with periodicity finer than that permitted by conventional photolithography can be produced. The height of SiNWs is, in turn, controlled by the etching duration. However, it was found that very high aspect ratio SiNWs tend to be bent during processing. Hexagonal arrays of SiNW with circular and hexagonal cross-sections of dimensions 200nm and less were produced using pillar and pore patterned SFIL moulds. In summary, this approach allows highlyordered SiNWs to be fabricated on a wafer-level basis suitable for semiconductor device manufacturing.

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