Creation of Color Centers in SiC PN Diodes Using Proton Beam Writing

We demonstrated that silicon vacancy (VSi) can be created in SiC pn junction diode by proton beam writing (PBW) without degradation of the diode performance. The VSi showed the same specific emission for both optically and electrically excitation, which suggests that electrically controllable VSi was created. In addition, optically detected magnetic resonance (ODMR) signal was successfully detected from optically excited VSi at room temperature. This result suggests that VSi introduced into the device by PBW still maintain spin manipulating capability, which is an important step toward realizing SiC devices internally equipped with a VSi-based quantum sensor.