Chemical Solution Deposition of Zn[sub 1−x]Zr[sub x]O Thin Films as Active Channel Layers of Thin-Film Transistors

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.

Download Full-text

Fabrication of polydimethylsiloxane shadow masks for chemical solution deposition of CdS thin-film transistors

Thin Solid Films ◽

10.1016/j.tsf.2008.02.041 ◽

2008 ◽

Vol 516 (18) ◽

pp. 6492-6498 ◽

Cited By ~ 13

Author(s):

J.H. Lee ◽

J.W. Yoon ◽

I.G. Kim ◽

J.S. Oh ◽

H.J. Nam ◽

...

Keyword(s):

Thin Film ◽

Chemical Solution Deposition ◽

Thin Film Transistors ◽

Chemical Solution ◽

Solution Deposition ◽

Cds Thin Film

Download Full-text

Orientation control of SrRuO3 thin film on a Si substrate by chemical solution deposition for an electrode of lead zirconate titanate thin films

Materials Letters ◽

10.1016/j.matlet.2016.06.023 ◽

2016 ◽

Vol 181 ◽

pp. 74-77 ◽

Cited By ~ 6

Author(s):

Tomoya Ohno ◽

Kentaroh Fukumitsu ◽

Takamasa Honda ◽

Shigeto Hirai ◽

Takashi Arai ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Lead Zirconate Titanate ◽

Chemical Solution Deposition ◽

Lead Zirconate ◽

Chemical Solution ◽

Si Substrate ◽

Solution Deposition ◽

Orientation Control ◽

Srruo3 Thin Film

Download Full-text

Influence of Mn dopants on the structure and multiferroic properties of a Bi0.90Ho0.10FeO3 thin film

RSC Advances ◽

10.1039/c5ra00609k ◽

2015 ◽

Vol 5 (54) ◽

pp. 43594-43600 ◽

Cited By ~ 4

Author(s):

Wei Ye ◽

Guoqiang Tan ◽

Xia Yan ◽

Huijun Ren ◽

Ao Xia

Keyword(s):

Thin Film ◽

Thin Films ◽

Chemical Solution Deposition ◽

Chemical Solution ◽

Solution Deposition ◽

Multiferroic Properties

Mn substituted Bi0.90Ho0.10FeO3 (BHFO) thin films having the compositions Bi0.90Ho0.10Fe1−xMnxO3 (BHFMO) (x = 0, 0.01, 0.03, 0.05) were synthesized via chemical solution deposition.

Download Full-text

Dielectric properties of (Ba,Sr)TiO3 thin films with varied microstructures prepared by the chemical solution deposition method for thin-film capacitors and ferroelectric varactors

IEEE Transactions on Ultrasonics Ferroelectrics and Frequency Control ◽

10.1109/tuffc.2010.1678 ◽

2010 ◽

Vol 57 (10) ◽

pp. 2198-2204 ◽

Cited By ~ 3

Author(s):

K Kageyama ◽

T Hosokura ◽

T Nakaiso ◽

H Takagi

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Properties ◽

Chemical Solution Deposition ◽

Deposition Method ◽

Chemical Solution ◽

Solution Deposition ◽

Chemical Solution Deposition Method ◽

Thin Film Capacitors ◽

Ferroelectric Varactors

Download Full-text

Epitaxial growth of PbZr0.5Ti0.5O3 thin films on SrRuO3/SrTiO3 substrates using chemical solution deposition: Microstructural and ferroelectric properties

Journal of Materials Research ◽

10.1557/jmr.2001.0240 ◽

2001 ◽

Vol 16 (6) ◽

pp. 1739-1744 ◽

Cited By ~ 9

Author(s):

J. H. Kim ◽

Youngman Kim ◽

A. T. Chien ◽

F. F. Lange

Keyword(s):

Thin Film ◽

Thin Films ◽

Chemical Solution Deposition ◽

Ferroelectric Properties ◽

Chemical Solution ◽

Solution Deposition ◽

Pzt Thin Films ◽

Chemical Solution Deposition Method ◽

Pzt Thin Film ◽

Film Substrate

Epitaxial PbZr0.5Ti0.5O3 (PZT) thin films were grown on top of a SrRuO3 epitaxial electrode layer on a (100) SrTiO3 substrate by the chemical solution deposition method at various temperatures. The microstructure of the PZT thin films was investigated by x-ray diffraction and transmission electron microscopy, and the ferroelectric properties were measured using the Ag/PZT/SRO capacitor structure. In the PZT thin film annealed at low temperature (450 °C/1h), both the perovskite PZT phase at the film/substrate interface and the fluorite PZT phase in the upper region of the film were obtained. It exhibited nonferroelectric properties. The PZT thin film annealed at temperature as low as 525 °C had only a perovskite tetragonal phase and the epitaxial orientational relationship of (001)[010]PZT∥(001)[010]SRO∥(001)[010]STOwith the substrate, and shows a ferroelectric property. The remnant (Pr) and saturation polarization (Ps) density of the sample annealed at 600 °C/1h were measured to be Pr ˜ 51.4 μC/cm2 and Ps ˜ 62.1 μC/cm2 at 5 V, respectively. The net switched polarization dropped only to 98% of its initial value after 7 × 108 fatigue cycles.

Download Full-text

The Effect of Bi-excess Surface Layers on BiFeO3 Thin Films Prepared by Chemical Solution Deposition

MRS Proceedings ◽

10.1557/proc-1034-k11-10 ◽

2007 ◽

Vol 1034 ◽

Author(s):

Yoshitaka Nakamura ◽

Seiji Nakashima ◽

Dan Ricinschi ◽

Masanori Okuyama

Keyword(s):

Thin Film ◽

Thin Films ◽

Chemical Solution Deposition ◽

Remanent Polarization ◽

Bottom Surface ◽

Chemical Solution ◽

Surface Layers ◽

Solution Deposition ◽

Excess Surface ◽

Imperfect Crystal

AbstractWe have investigated the effect of Bi-excess surface layers of stoichiometric BiFeO3 thin films prepared by chemical solution deposition. A stoichiometric BiFeO3 thin film with both the Bi-excess top and bottom surface layers shows improved crystallinity with the remanent polarization of 65 μC/cm2 at 80 K, which is larger than BiFeO3 film prepared by the same process using stoichiometric solution. These results are attributed to the reduction of the imperfect crystal at the interface between BiFeO3 film and electrode. Stoichiometric BiFeO3 thin film with Bi-excess top and bottom surface layers also reserves the magnetic property of stoichiometric film. Stoichiometric BiFeO3 thin films with Bi-excess surface layers are an effective way to obtain good multiferroic properties.

Download Full-text