Characterization of Ge[sub 1−x]Te[sub x] Chalcogenide Thin Films Deposited by MOCVD for Phase Change Memory Applications
2008 ◽
Vol 155
(2)
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pp. D137
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2008 ◽
Vol 37
(4)
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pp. 535-539
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2014 ◽
Vol 127
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pp. 77-80
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2010 ◽
Vol 157
(12)
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pp. P113
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2016 ◽
Vol 432
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pp. 505-509
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