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2021 ◽  
pp. 117376
Author(s):  
Quanxin Yang ◽  
Xiaojin Li ◽  
Hongliang Liu ◽  
Dahuai Zheng ◽  
Shavkat Akhmadaliev ◽  
...  

Author(s):  
Sadia Sharif ◽  
G. Murtaza ◽  
Muhammad Azhar Khan ◽  
Asma Sadaf ◽  
Tahani I. Al-Muhimeed ◽  
...  

2021 ◽  
Author(s):  
Asmat Ullah ◽  
Muhammad Usman ◽  
Muhammad Maqbool

Abstract Er doped Aluminum Nitride (AlN) thin films were prepared using magnetron sputtering technique in a Nitrogen (N) atmosphere on a Silicon substrate. The samples were annealed at a temperature of 900 0C. The fabricated specimen was irradiated with proton dose of 1×1014 ions/cm2 with incident energy of 335 keV using ions accelerators. The relative concentration, thickness and structural properties of the thin films were determined by Rutherford Backscattering Spectroscopy (RBS) and X-Ray Diffraction (XRD) respectively. Before and after the irradiation the energy levels for their types of bonding existing in our specimens were traced with Fourier Transform Infrared Spectroscopy (FTIR).


2021 ◽  
Author(s):  
Quanxin Yang ◽  
Xiaojin Li ◽  
Hongliang Liu ◽  
Dahuai Zheng ◽  
Shavkat Akhmadaliev ◽  
...  

Author(s):  
Olga V. Maksakova ◽  
Alexander D. Pogrebnjak ◽  
V. V. Buranich ◽  
Volodymyr I. Ivashchenko ◽  
L. S. Baimoldanova ◽  
...  

Nano Express ◽  
2020 ◽  
Vol 1 (2) ◽  
pp. 020044
Author(s):  
Jyotshana Gaur ◽  
Hitesh Kumar Sharma ◽  
Shrestha Tyagi ◽  
Chetna Tyagi ◽  
Pargam Vashishtha ◽  
...  

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