Abstract
Er doped Aluminum Nitride (AlN) thin films were prepared using magnetron sputtering technique in a Nitrogen (N) atmosphere on a Silicon substrate. The samples were annealed at a temperature of 900 0C. The fabricated specimen was irradiated with proton dose of 1×1014 ions/cm2 with incident energy of 335 keV using ions accelerators. The relative concentration, thickness and structural properties of the thin films were determined by Rutherford Backscattering Spectroscopy (RBS) and X-Ray Diffraction (XRD) respectively. Before and after the irradiation the energy levels for their types of bonding existing in our specimens were traced with Fourier Transform Infrared Spectroscopy (FTIR).