On Effective Bending Stiffness of a Laminate Nanoplate Considering Steigmann–Ogden Surface Elasticity

As at the nanoscale the surface-to-volume ratio may be comparable with any characteristic length, while the material properties may essentially depend on surface/interface energy properties. In order to get effective material properties at the nanoscale, one can use various generalized models of continuum. In particular, within the framework of continuum mechanics, the surface elasticity is applied to the modelling of surface-related phenomena. In this paper, we derive an expression for the effective bending stiffness of a laminate plate, considering the Steigmann–Ogden surface elasticity. To this end, we consider plane bending deformations and utilize the through-the-thickness integration procedure. As a result, the calculated elastic bending stiffness depends on lamina thickness and on bulk and surface elastic moduli. The obtained expression could be useful for the description of the bending of multilayered thin films.

Resistivity of Fe/Al Multilayered Thin Films from Low Temperature to Room Temperature

By using electron beam gun and thermal deposition techniques in the vacuum range 6 x10-5mbar. The pure materials of 99.99% purity of iron and aluminium multilayers films grown on glass substrates at 300K in the following viz. The resistance was measured using four probe method at UGC-DAE Consortium Indore (4.2K to 300K) later resistivity, conductivity, temperature co-efficient of resistance (TCR), residual resistivity ratio (RRR) , and activation energy(Ea) were calculated. The resistivity behavior shown that the resistivity is increased with increasing the n value, resistivity is increased with increasing temperature. The data belonging to metallic region has been analyzed using the conventional power law’s and it is first time this set of films have explore resistivity at low temperature.

Accurate background correction in neutron reflectometry studies of soft condensed matter films in contact with fluid reservoirs

Neutron reflectometry (NR) is a powerful method for looking at the structures of multilayered thin films, including biomolecules on surfaces, particularly proteins at lipid interfaces. The spatial resolution of the film structure obtained through an NR experiment is limited by the maximum wavevector transfer at which the reflectivity can be measured. This maximum is in turn determined primarily by the scattering background, e.g. from incoherent scattering from a liquid reservoir or inelastic scattering from cell materials. Thus, reduction of scattering background is an important part of improving the spatial resolution attainable in NR measurements. Here, the background field generated by scattering from a thin liquid reservoir on a monochromatic reflectometer is measured and calculated. It is shown that background subtraction utilizing the entire background field improves data modeling and reduces experimental uncertainties associated with localized background subtraction.

Near-IR Emitting Si Nanocrystals Fabricated by Thermal Annealing of SiNx/Si3N4 Multilayers

Silicon nanocrystals in silicon nitride matrix are fabricated by thermal annealing of SiNx/Si3N4 multilayered thin films, and characterized by transmission electron microscopy, X-ray reflectivity and diffraction analysis, photoluminescence and X-ray photoelectron spectroscopy techniques. Si nanocrystals with a mean size of about 4 nm are obtained, and their properties are studied as a function of SiNx layer thickness (1.6–2 nm) and annealing temperature (900–1250 °C). The effect of coalescence of adjacent nanocrystals throughout the Si3N4 barrier layers is observed, which results in formation of distinct ellipsoidal-shaped nanocrystals. Complete intermixing of multilayered film accompanied by an increase of nanocrystal mean size for annealing temperature as high as 1250 °C is shown. Near-IR photoluminescence with the peak at around 1.3–1.4 eV is detected and associated with quantum confined excitons in Si nanocrystals: Photoluminescence maximum is red shifted upon an increase of nanocrystal mean size, while the measured decay time is of order of microsecond. The position of photoluminescence peak as compared to the one for Si nanocrystals in SiO2 matrix is discussed.