Patterning of N:Ge2Sb2Te5 Films and the Characterization of Etch Induced Modification for Non-Volatile Phase Change Memory Applications

2008 ◽  
Author(s):  
E. A. Joseph ◽  
T. D. Happ ◽  
S.-H. Chen ◽  
S. Raoux ◽  
C.-F. Chen ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Volatile Phase ◽  
Memory Applications ◽  
Change Memory

Preparation and characterization of GeTe4 thin films as a candidate for phase change memory applications

2011 ◽  
Vol 109 (6) ◽  
pp. 066104 ◽  
Author(s):  
Hao Jiang ◽  
Kang Guo ◽  
Hanni Xu ◽  
Yidong Xia ◽  
Kun Jiang ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Applications ◽  
Change Memory

scholarly journals Scalability of Phase Change Materials in Nanostructure Template

2015 ◽  
Vol 2015 ◽  
pp. 1-4
Author(s):  
Wei Zhang ◽  
Biyun L. Jackson ◽  
Ke Sun ◽  
Jae Young Lee ◽  
Shyh-Jer Huang ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Scaling Limit ◽  
Phase Change Memory ◽  
Leakage Power ◽  
Memory Element ◽  
Transmission Electron ◽  
Diffraction Mode ◽  
Memory Applications ◽  
Change Memory

The scalability of In2Se3, one of the phase change materials, is investigated. By depositing the material onto a nanopatterned substrate, individual In2Se3nanoclusters are confined in the nanosize pits with well-defined shape and dimension permitting the systematic study of the ultimate scaling limit of its use as a phase change memory element. In2Se3of progressively smaller volume is heated inside a transmission electron microscope operating in diffraction mode. The volume at which the amorphous-crystalline transition can no longer be observed is taken as the ultimate scaling limit, which is approximately 5 nm3for In2Se3. The physics for the existence of scaling limit is discussed. Using phase change memory elements in memory hierarchy is believed to reduce its energy consumption because they consume zero leakage power in memory cells. Therefore, the phase change memory applications are of great importance in terms of energy saving.

Role of the nano amorphous interface in the crystallization of Sb2Te3 towards non-volatile phase change memory: insights from first principles

2014 ◽  
Vol 16 (22) ◽  
pp. 10810 ◽  
Author(s):  
Xue-Peng Wang ◽  
Nian-Ke Chen ◽  
Xian-Bin Li ◽  
Yan Cheng ◽  
X. Q. Liu ◽  
...  
Keyword(s):  
Phase Change ◽  
First Principles ◽  
Phase Change Memory ◽  
Volatile Phase ◽  
Change Memory

Surface Oxidation phenomena in Ge-rich GeSbTe alloys and N doping influence for Phase-Change Memory applications

2021 ◽  
pp. 151514
Author(s):  
Ludovic Goffart ◽  
Bernard Pelissier ◽  
Gauthier Lefèvre ◽  
Yannick Le–Friec ◽  
Christophe Vallée ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
Surface Oxidation ◽  
N Doping ◽  
Memory Applications ◽  
Change Memory
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