Solid Phase Crystallization (SPC) of a-Si Thin Film Induced by a Novel Approach for Photovoltaic Devices

ECS Transactions ◽

10.1149/1.2980294 ◽

2019 ◽

Vol 16 (6) ◽

pp. 79-85

Author(s):

Taekon Kim ◽

Purushottam Kumar ◽

Jae Seok Lee ◽

Kerry Siebein ◽

Rajiv K. Singh

Keyword(s):

Thin Film ◽

Solid Phase ◽

Photovoltaic Devices ◽

Solid Phase Crystallization ◽

Novel Approach ◽

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Solid Phase Crystallization (SPC) of a-Si Thin Film Induced by a Novel Approach for Photovoltaic Devices

ECS Meeting Abstracts ◽

10.1149/ma2008-02/26/1985 ◽

2008 ◽

Keyword(s):

Thin Film ◽

Solid Phase ◽

Photovoltaic Devices ◽

Solid Phase Crystallization ◽

Novel Approach ◽

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Polycrystalline Si thin-film solar cell prepared by solid phase crystallization (SPC) method

Solar Energy Materials and Solar Cells ◽

10.1016/0927-0248(94)90052-3 ◽

1994 ◽

Vol 34 (1-4) ◽

pp. 285-289 ◽

Author(s):

Takao Matsuyama ◽

Toshiaki Baba ◽

Tsuyoshi Takahama ◽

Shinya Tsuda ◽

Shoichi Nakano

Keyword(s):

Thin Film ◽

Thin Film Solar Cell ◽

Solid Phase ◽

Solid Phase Crystallization ◽

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Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.565 ◽

1994 ◽

Vol 37-38 ◽

pp. 565-570 ◽

Author(s):

M. Fuse ◽

I. Asai ◽

M. Hirota ◽

Yoshinari Miyamoto

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Solid Phase ◽

Low Pressure ◽

Excimer Laser Annealing ◽

Solid Phase Crystallization ◽

Si Films ◽

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Effects of Solid Phase Crystallization Condition and Gate Insulator Thickness on Device Properties of Poly-Si Thin Film Transistors

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2016.1894 ◽

2016 ◽

Vol 11 (1) ◽

pp. 122-128

Author(s):

Kyoung-Bo Kim ◽

Moojin Kim ◽

Hong-Chan Lee ◽

Jongpil Lee ◽

Guanghai Jin ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Solid Phase ◽

Gate Insulator ◽

Solid Phase Crystallization ◽

Crystallization Condition ◽

Device Properties ◽

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Effects of high pressure annealing on the characteristics of solid phase crystallization poly-Si thin-film transistors

Journal of Applied Physics ◽

10.1063/1.2885345 ◽

2008 ◽

Vol 103 (4) ◽

pp. 044508 ◽

Author(s):

Moojin Kim ◽

Kyoung-Bo Kim ◽

Ki-Yong Lee ◽

CheolHo Yu ◽

Hye-Dong Kim ◽

...

Keyword(s):

Thin Film ◽

High Pressure ◽

Thin Film Transistors ◽

Solid Phase ◽

Solid Phase Crystallization ◽

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Appearance of Single-Crystalline Properties in Fine-Patterned Si Thin Film Transistors (TFTs) by Solid Phase Crystallization (SPC)

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.l1584 ◽

1993 ◽

Vol 32 (Part 2, No. 11A) ◽

pp. L1584-L1587 ◽

Author(s):

Takashi Noguchi

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Solid Phase ◽

Solid Phase Crystallization ◽

Single Crystalline ◽

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Extraction of trap densities in poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on temperature and time of post annealing

Solid-State Electronics ◽

10.1016/j.sse.2010.08.005 ◽

2010 ◽

Vol 54 (12) ◽

pp. 1500-1504 ◽

Author(s):

Mutsumi Kimura

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Solid Phase ◽

Solid Phase Crystallization ◽

Post Annealing ◽

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Extraction of trap densities in entire bandgap of poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on process conditions of post annealing

Solid-State Electronics ◽

10.1016/j.sse.2011.05.002 ◽

2011 ◽

Vol 63 (1) ◽

pp. 94-99 ◽

Author(s):

Mutsumi Kimura

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Solid Phase ◽

Process Conditions ◽

Solid Phase Crystallization ◽

Post Annealing ◽

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Evaluation of Solar Cell Properties of Poly-Si Thin Film Fabricated with Novel Process Conditions for Solid Phase Crystallization

Journal of the Korean Institute of Electrical and Electronic Material Engineers ◽

10.4313/jkem.2011.24.9.766 ◽

2011 ◽

Vol 24 (9) ◽

pp. 766-772

Author(s):

Soon-Yong Kweon ◽

Ji-Hyun Jeong ◽

Yuguo Tao ◽

Sergey Varlamov

Keyword(s):

Thin Film ◽

Solid Phase ◽

Process Conditions ◽

Solid Phase Crystallization ◽

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Improved Performance of F-Ions-Implanted Poly-Si Thin-Film Transistors Using Solid Phase Crystallization and Excimer Laser Crystallization

Journal of Display Technology ◽

10.1109/jdt.2006.890707 ◽

2007 ◽

Vol 3 (1) ◽

pp. 45-51 ◽

Author(s):

Chun-Hao Tu ◽

Ting-Chang Chang ◽

Po-Tsun Liu ◽

Che-Yu Yang ◽

Li-Wei Feng ◽

...

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Solid Phase ◽

Laser Crystallization ◽

Solid Phase Crystallization ◽

Excimer Laser Crystallization ◽

Improved Performance ◽

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