Extraction of trap densities in entire bandgap of poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on process conditions of post annealing

2011 ◽  
Vol 63 (1) ◽  
pp. 94-99 ◽  
Author(s):  
Mutsumi Kimura
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Process Conditions ◽  
Solid Phase Crystallization ◽  
Post Annealing ◽  
Si Thin Film

Effects of high pressure annealing on the characteristics of solid phase crystallization poly-Si thin-film transistors

2008 ◽  
Vol 103 (4) ◽  
pp. 044508 ◽  
Author(s):  
Moojin Kim ◽  
Kyoung-Bo Kim ◽  
Ki-Yong Lee ◽  
CheolHo Yu ◽  
Hye-Dong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
High Pressure ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Si Thin Film

Uniform Poly-Si TFTs for AMOLEDs Using Field-Enhanced Rapid Thermal Annealing

2007 ◽  
Vol 124-126 ◽  
pp. 447-450 ◽  
Author(s):  
Hyoung June Kim
Keyword(s):  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Thin Film Transistors ◽  
Solid Phase ◽  
Radiative Heating ◽  
Solid Phase Crystallization ◽  
Glass Substrates ◽  
Grain Structures ◽  
Amorphous Si ◽  
Si Thin Film

Polycrystalline Si thin film transistors (TFTs) have been fabricated through solid phase crystallization using field-enhanced rapid thermal annealing (FE-RTA) system. The system consists of inline furnace modules for preheating and cooling of the glass substrates and a process module for rapid radiative heating combined with alternating magnetic field induction. The FE-RTA system enables crystallization of amorphous Si at high throughputs without any glass damages. While the typical grain structures of poly-Si by FE-RTA are similar to those of solid phase crystallization, the residual amorphous Si and intragranular defects are reduced.

Polysilicon Thin Film Transistors

1990 ◽  
Vol 182 ◽  
Author(s):  
Ichio Yudasaka ◽  
Hiroyuki Ohshima
Keyword(s):  
Thin Film ◽  
Thermal Oxidation ◽  
Thin Film Transistors ◽  
Laser Annealing ◽  
Solid Phase ◽  
Solid Phase Crystallization ◽  
Practical Applications ◽  
Polysilicon Film ◽  
Alternative Technologies ◽  
Low Temperature Processing

AbstractPolysilicon thin film transistors are now in mass production. Key factors of the success are thinner polysilicon film and thermal oxidation. Practical applications of polysilicon thin film transistors have been limited, however, because of high temperature processing. Alternative technologies to thermal oxidation are very low pressure deposition, solid-phase crystallization, laser-annealing and hydrogenation. These technologies are compatible with low temperature processing and will contribute to the advance of polysilicon thin film transistors in the future.

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