Comparative Studies on Temperature-Dependent Characteristics of Passivated In[sub 0.2]Ga[sub 0.8]AsSb∕GaAs High-Electron-Mobility Transistors

Journal of The Electrochemical Society ◽

10.1149/1.3031596 ◽

2009 ◽

Vol 156 (2) ◽

pp. H87 ◽

Author(s):

Ching-Sung Lee

Keyword(s):

Electron Mobility ◽

Comparative Studies ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2648 ◽

2019 ◽

Vol 32 (6) ◽

Author(s):

Mohammad N. Khan ◽

Umer F. Ahmed ◽

Muhammad M. Ahmed ◽

Saif Rehman

Keyword(s):

Analytical Model ◽

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches

Semiconductors ◽

10.1134/s1063782619030187 ◽

2019 ◽

Vol 53 (3) ◽

pp. 406-410 ◽

Author(s):

Jung-Hui Tsai ◽

Pao-Sheng Lin ◽

Yu-Chi Chen ◽

Syuan-Hao Liou ◽

Jing-Shiuan Niu

Keyword(s):

Electron Mobility ◽

Comparative Studies ◽

High Electron Mobility Transistors ◽

Virtual Channel ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effect of Nonannealed Ohmic-Recess Structure on Temperature-Dependent Characteristics of Metamorphic High-Electron-Mobility Transistors

Journal of The Electrochemical Society ◽

10.1149/1.2905813 ◽

2008 ◽

Vol 155 (6) ◽

pp. H443 ◽

Author(s):

Li-Yang Chen ◽

Shiou-Ying Cheng ◽

Kuei-Yi Chu ◽

Tsung-Han Tsai ◽

Tzu-Pin Chen ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Effect of Formal Passivations on Temperature-Dependent Characteristics of High Electron Mobility Transistors

Journal of The Electrochemical Society ◽

10.1149/1.2409479 ◽

2007 ◽

Vol 154 (3) ◽

pp. H134 ◽

Author(s):

Po-Hsien Lai ◽

Rong-Chau Liu ◽

Ssu-I Fu ◽

Yan-Ying Tsai ◽

Ching-Wen Hung ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature-Dependent Study of AlGaAs/InGaAs Integrated Depletion/Enhancement-Mode High Electron Mobility Transistors with Virtual Channel Layers

ECS Journal of Solid State Science and Technology ◽

10.1149/2162-8777/ab9b03 ◽

2020 ◽

Vol 9 (5) ◽

pp. 055019

Author(s):

Jung-Hui Tsai ◽

Pao-Sheng Lin ◽

Wen-Chau Liu

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

Virtual Channel ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Enhancement Mode ◽

Electron Mobility Transistors ◽

Temperature Dependent Study

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Comparative studies of normally-off Al 0.26 Ga 0.74 N/AlN/GaN/Si high electron mobility transistors with different gate structures

Materials Science in Semiconductor Processing ◽

10.1016/j.mssp.2017.03.034 ◽

2017 ◽

Vol 66 ◽

pp. 39-43 ◽

Author(s):

Ching-Sung Lee ◽

Wei-Chou Hsu ◽

Han-Yin Liu ◽

Si-Fu Chen ◽

Yu-Chang Chen ◽

...

Keyword(s):

Electron Mobility ◽

Comparative Studies ◽

High Electron Mobility Transistors ◽

High Electron ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Comprehensive Temperature-Dependent Studies of Metamorphic High Electron Mobility Transistors With Double and Single $\delta$-Doped Structures

IEEE Transactions on Electron Devices ◽

10.1109/ted.2011.2167625 ◽

2011 ◽

Vol 58 (12) ◽

pp. 4276-4282 ◽

Author(s):

Chien-Chang Huang ◽

Tai-You Chen ◽

Chi-Shiang Hsu ◽

Chun-Chia Chen ◽

Chung-I. Kao ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature-dependent DC characteristics of AlInN/GaN high-electron-mobility transistors

Electronic Materials Letters ◽

10.1007/s13391-017-1606-1 ◽

2017 ◽

Vol 13 (4) ◽

pp. 302-306 ◽

Author(s):

Seongjun Kim ◽

Kwang-Soon Ahn ◽

Jae-Hyun Ryou ◽

Hyunsoo Kim

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

Dc Characteristics

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Voltage- and Temperature-Dependent Degradation of AIN/GaN High Electron Mobility Transistors

2018 International Integrated Reliability Workshop (IIRW) ◽

10.1109/iirw.2018.8727092 ◽

2018 ◽

Author(s):

Tobias Kemmer ◽

Michael Dammann ◽

Martina Baeumler ◽

Peter Bruckner ◽

Helmer Konstanzer ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors

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Temperature‐Dependent Characteristics of AlGaN/GaN Nanowire Channel High Electron Mobility Transistors

physica status solidi (a) ◽

10.1002/pssa.201900396 ◽

2019 ◽

Vol 216 (16) ◽

pp. 1900396

Author(s):

Yunlong He ◽

Zeyang Huang ◽

Meng Zhang ◽

Mei Wu ◽

Minhan Mi ◽

...

Keyword(s):

Electron Mobility ◽

High Electron Mobility Transistors ◽

High Electron ◽

Temperature Dependent ◽

High Electron Mobility ◽

Electron Mobility Transistors ◽

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