An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics
2019 ◽
Vol 32
(6)
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2008 ◽
Vol 155
(6)
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pp. H443
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2007 ◽
Vol 154
(3)
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pp. H134
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2014 ◽
Vol 35
(11)
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pp. 114003
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2020 ◽
Vol 9
(5)
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pp. 055019
2018 ◽
Vol 65
(1)
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pp. 79-86
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2011 ◽
Vol 58
(12)
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pp. 4276-4282
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2017 ◽
Vol 13
(4)
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pp. 302-306
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2001 ◽
Vol 32
(1)
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pp. 85-88
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