An improved temperature dependent analytical model to predict AlGaN/GaN high electron mobility transistors AC characteristics

Author(s):  
Mohammad N. Khan ◽  
Umer F. Ahmed ◽  
Muhammad M. Ahmed ◽  
Saif Rehman
2014 ◽  
Vol 35 (11) ◽  
pp. 114003 ◽  
Author(s):  
S. Theodore Chandra ◽  
N. B. Balamurugan ◽  
G. Subalakshmi ◽  
T. Shalini ◽  
G. Lakshmi Priya

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