Parametric Studies on the Photovoltaic Performance Improvement of a Nanotube Photo-Electrochemical Solar Cell

2011 ◽  
Vol 158 (5) ◽  
pp. P57 ◽  
Author(s):  
W. H. Chen ◽  
A. G. Miranda ◽  
C. W. Hong
2014 ◽  
Vol 190 ◽  
pp. 111-118 ◽  
Author(s):  
Brijesh Tripathi ◽  
Pankaj Yadav ◽  
Kavita Pandey ◽  
Pooja Kanade ◽  
Manjeet Kumar ◽  
...  

CLEO: 2015 ◽  
2015 ◽  
Author(s):  
Sheng-Han Tsai ◽  
Ming-Lun Lee ◽  
Vin-Cent Su ◽  
Shih-Hung Lin ◽  
Chien-Hsiung Hsu ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1184
Author(s):  
Sung Hwan Joo ◽  
Hyung Wook Choi

Many attempts have been made to stabilize α-phase formamidinium lead iodide (α-FAPbI3) using mixed cations or anions with MA+, FA+, Br− and I−. A representative method is to stably produce α-FAPbI3 by adding methylammonium lead (MAPbBr3) to the light absorption layer of a perovskite solar cell and using methylammonium chloride (MACl) as an additive. However, in the perovskite containing MA+ and Br−, the current density is lowered due to an unwanted increase in the bandgap; phase separation occurs due to the mixing of halides, and thermal stability is lowered. Therefore, in this study, in order to minimize the decrease in the composition ratio of FAPbI3 and to reduce MA+, the addition amount of MACl was first optimized. Thereafter, a new attempt was made to fabricate FAPbI3 perovskite by using formamidinium lead bromide (FAPbBr3) and MACl together as phase stabilizers instead of MAPbBr3. As for the FAPbI3-MAPbBr3 solar cell, the (FAPbI3)0.93(MAPbBr3)0.07 device showed the highest efficiency. On the other hand, in the case of the FAPbI3-FAPbBr3 solar cell, the (FAPbI3)0.99(FAPbBr3)0.01 solar cell with a very small FAPbBr3 composition ratio showed the highest efficiency with fast photovoltaic performance improvement and high crystallinity. In addition, the FAPbI3-FAPbBr3 solar cell showed a higher performance than the FAPbI3-MAPbBr3 solar cell, suggesting that FAPbBr3 can sufficiently replace MAPbBr3.


2020 ◽  
Vol 92 (2) ◽  
pp. 20901
Author(s):  
Abdul Kuddus ◽  
Md. Ferdous Rahman ◽  
Jaker Hossain ◽  
Abu Bakar Md. Ismail

This article presents the role of Bi-layer anti-reflection coating (ARC) of TiO2/ZnO and back surface field (BSF) of V2O5 for improving the photovoltaic performance of Cadmium Sulfide (CdS) and Cadmium Telluride (CdTe) based heterojunction solar cells (HJSCs). The simulation was performed at different concentrations, thickness, defect densities of each active materials and working temperatures to optimize the most excellent structure and working conditions for achieving the highest cell performance using obtained optical and electrical parameters value from the experimental investigation on spin-coated CdS, CdTe, ZnO, TiO2 and V2O5 thin films deposited on the glass substrate. The simulation results reveal that the designed CdS/CdTe based heterojunction cell offers the highest efficiency, η of ∼25% with an enhanced open-circuit voltage, Voc of 0.811 V, short circuit current density, Jsc of 38.51 mA cm−2, fill factor, FF of 80% with bi-layer ARC and BSF. Moreover, it appears that the TiO2/ZnO bi-layer ARC, as well as ETL and V2O5 as BSF, could be highly promising materials of choice for CdS/CdTe based heterojunction solar cell.


2013 ◽  
Vol 134 ◽  
pp. 59-62 ◽  
Author(s):  
Qingbei Li ◽  
Jianming Lin ◽  
Jihuai Wu ◽  
Zhang Lan ◽  
Yue Wang ◽  
...  

10.5772/62435 ◽  
2016 ◽  
Vol 6 ◽  
pp. 24 ◽  
Author(s):  
Hong Li ◽  
Yingguo Yang ◽  
Xiao Feng ◽  
Kongchao Shen ◽  
Haiyang Li ◽  
...  

1995 ◽  
Vol 377 ◽  
Author(s):  
X. Deng ◽  
S. J. Jones ◽  
J. Evans ◽  
M. Izu

ABSTRACTThe Schottky barrier device with a metal/a-Si (n+) /a-Si alloy/metal structure has been widely used as an alternative evaluation tool for the photovoltaic performance of a-Si alloy material since it more reliably reflects the carrier transport in a solar cell than the conventional material characterization tool such as PDS, CPM, and SSPG, and is easier to be fabricated compared with a complete nip solar cell. However, a multiple chamber device making system is still needed to fabricate such a device since one does not want to deposit the a-Si intrinsic material to be studied together with an n+ layer in the same chamber. We have explored the use of a Schottky barrier device deposited on heavily doped n-type crystalline wafer substrate, c-Si (n+) /a-Si alloy/metal, as an evaluation tool for a-Si alloy materials. In this device, besides the evaporation of a thin semi-transparent metal layer, only the active a-Si alloy layer needs to be deposited using the plasma enhanced or other deposition techniques. We have compared the performance of such a device with that of reference n-i-p solar cells deposited at the same time and demonstrated that the FF measured under weak red light show a good correlation between these two types of devices. Therefore the c-Si (n+) /a-Si alloy/metal device can be used as a convenient technique to reliably evaluate the material performance in a solar cell device.


2011 ◽  
Vol 4 (8) ◽  
pp. 2799 ◽  
Author(s):  
Sang Hyuk Im ◽  
Hi-jung Kim ◽  
Jae Hui Rhee ◽  
Choong-Sun Lim ◽  
Sang Il Seok

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