Low Temperature Surface Passivation of Black Silicon Solar Cells by High-Pressure O2 Thermal Oxidation

2013 ◽  
Vol 2 (4) ◽  
pp. Q17-Q20 ◽  
Author(s):  
W. F. Liu ◽  
J. M. Bian ◽  
Z. C. Zhao ◽  
Y. L. Luo ◽  
Z. Yuan ◽  
...  
1996 ◽  
Vol 40 (4) ◽  
pp. 297-345 ◽  
Author(s):  
C. Leguijt ◽  
P. Lölgen ◽  
J.A. Eikelboom ◽  
A.W. Weeber ◽  
F.M. Schuurmans ◽  
...  

2017 ◽  
Vol 2017 ◽  
pp. 1-6 ◽  
Author(s):  
Shun Sing Liao ◽  
Yueh Chin Lin ◽  
Chuan Lung Chuang ◽  
Edward Yi Chang

In this study, the efficiency of the multicrystalline was improved by inserting a two-step growth thermal oxide layer as the surface passivation layer. Two-step thermal oxidation process can reduce carrier recombination at the surface and improve cell efficiency. The first oxidation step had a growth temperature of 780°C, a growth time of 5 min, and with N2/O2 gas flow ratio 12 : 1. The second oxidation had a growth temperature of 750°C, growth time of 20 min, and under pure N2 gas environment. Carrier lifetime was increased to 15.45 μs, and reflectance was reduced 0.52% using the two-step growth method as compared to the conventional one-step growth oxide passivation method. Consequently, internal quantum efficiency of the solar cell increased 4.1%, and conversion efficiency increased 0.37%. These results demonstrate that the two-step thermal oxidation process is an efficient way to increase the efficiency of the multicrystalline silicon solar cells.


RSC Advances ◽  
2016 ◽  
Vol 6 (106) ◽  
pp. 104073-104081 ◽  
Author(s):  
Ping Li ◽  
Yi Wei ◽  
Xin Tan ◽  
Xiaoxuan Li ◽  
Yuxuan Wang ◽  
...  

High efficiency black silicon solar cells achieved by optimization of emitter and surface passivation.


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