Physical Mechanisms Leading to the Coulomb Blockade and Coulomb Staircase Structures in Strongly Coupled Multi-Island Single-Electron Devices

2016 ◽  
Vol 5 (7) ◽  
pp. Q199-Q203
Author(s):  
Madhusudan A. Savaikar ◽  
Paul L. Bergstrom ◽  
John A. Jaszczak
Author(s):  
Shigeo Sato ◽  
Koji Nakajima

Single electron devices utilizing the Coulomb blockade phenomenon have attractive features such as extreme low power consumption, one by one electron flow controllability, small device size, etc. However, besides promising applications such as the current standard and charge detection, it is not easy to apply the single electron devices to conventional computational tasks due to its stochastic operation and low amplification capability. Therefore, it is important for us to consider suitable applications of single electron devices. In this paper, we show three applications such as a noise generator, a stochastic neural network, and a charge detector employing stochastic resonance. Trough these applications, we see the advantages of single electron devices and study the direction of applications.


Author(s):  
Alexei Orlov ◽  
Xiangning Luo ◽  
Thomas Kosel ◽  
Gregory Snider

1999 ◽  
Vol 86 (5) ◽  
pp. 605-639 ◽  
Author(s):  
YASUO TAKAHASHI ◽  
AKIRA FUJIWARA ◽  
MASAO NAGASE ◽  
HIDEO NAMATSU ◽  
KENJI KURIHARA ◽  
...  

1999 ◽  
Vol 47 (1-4) ◽  
pp. 179-183 ◽  
Author(s):  
Tobias Junno ◽  
Martin H. Magnusson ◽  
Sven-Bertil Carlsson ◽  
Knut Deppert ◽  
Jan-Olle Malm ◽  
...  

2012 ◽  
Vol 400 (5) ◽  
pp. 052028
Author(s):  
Yu A Pashkin ◽  
J P Pekola ◽  
D A Knyazev ◽  
T F Li ◽  
S Kafanov ◽  
...  

1998 ◽  
Vol 09 (01) ◽  
pp. 165-207 ◽  
Author(s):  
DORAN D. SMITH

In the mid 1980s Averin and Likharev predicted that with the use of ultrasmall tunnel junctions a time correlation of electron flow through a junction could be observed, and permit the measurement of the effect of a net charge of less than one electron on the junction. Both effects were soon experimentally verified, and since that time there has been an explosion of work in the filed of single electron devices. This chapter reviews the fundamental concepts behind the operation of such devices. it then describes some of the single electron effects studied in semiconductors. Superconducting devices are then constrasted to the semiconductor and the normal metal single electron devices. The details of some current applications are described, and a thumbnail sketch of current fabrication methods is given.


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