Fabrication and Characterization of a PbO2-TiN Composite Electrode by Co-Deposition Method

2016 ◽  
Vol 163 (10) ◽  
pp. D592-D602 ◽  
Author(s):  
Xiaoliang Li ◽  
Hao Xu ◽  
Wei Yan
Keyword(s):  
Composite Electrode ◽  
Deposition Method ◽  
Fabrication And Characterization

Fabrication and characterization of ultraviolet photosensors from ZnO nanowires prepared using chemical bath deposition method

2016 ◽  
Vol 119 (8) ◽  
pp. 084306 ◽  
Author(s):  
Ahmed S. Al-Asadi ◽  
Luke Alexander Henley ◽  
Sujoy Ghosh ◽  
Abdiel Quetz ◽  
Igor Dubenko ◽  
...  
Keyword(s):  
Chemical Bath Deposition ◽  
Zno Nanowires ◽  
Chemical Bath Deposition Method ◽  
Deposition Method ◽  
Fabrication And Characterization

Fabrication and characterization of kesterite Cu2ZnSnS4thin films deposited by electrostatic spray assisted vapour deposition method

2014 ◽  
Vol 212 (1) ◽  
pp. 135-139 ◽  
Author(s):  
J. P. Liu ◽  
K. L. Choy ◽  
M. Placidi ◽  
J. López-García ◽  
E. Saucedo ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Deposition Method ◽  
Fabrication And Characterization ◽  
Electrostatic Spray

Fabrication and characterization of Au/Zn composite electrode on p-CdZnTe (111) B plane

2016 ◽  
Vol 13 (7-9) ◽  
pp. 486-489 ◽  
Author(s):  
Xiao-yan Liang ◽  
Jia-hua Min ◽  
Liu-qing Yang ◽  
Ji-jun Zhang ◽  
Lin-jun Wang ◽  
...  
Keyword(s):  
Composite Electrode ◽  
Fabrication And Characterization

Fabrication and Characterization of n-ZnO/p-SiC Heterojunction Diode

2012 ◽  
Vol 717-720 ◽  
pp. 1323-1326
Author(s):  
M. Guziewicz ◽  
W. Jung ◽  
R. Kruszka ◽  
J. Domagala ◽  
Ania Piotrowska ◽  
...  
Keyword(s):  
Impedance Spectroscopy ◽  
Atomic Layer ◽  
Deposition Method ◽  
Heterojunction Diode ◽  
Lattice Matching ◽  
Layer Deposition ◽  
Atomic Layer Deposition Method ◽  
Good Lattice ◽  
Fabrication And Characterization

ZnO as well as SiC are wide bangap materials with prospective electronic applications. Very good lattice matching of the materials allowed formation a n-ZnO/p-SiC heteroepitaxial junction. The n˗ZnO film was epitaxially grown onto the p-SiC substrate using the atomic layer deposition method. The fabricated p-n diode was studied by I-V and C-V characteristics as well as by impedance spectroscopy. The diode shows a high rectifying ratio of 107and an ideality factor of 1.21.

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