Solution-Processed Epitaxial Growth of MAPbI3 Single-Crystal Films for Highly Stable Photodetectors

Recent years, organic-inorganic hybrid perovskites (OIHPs) have been widely used in applications, such as solar cells, lasers, light-emission diodes, and photodetectors due to their outstanding optoelectronic properties. Nowadays photodetectors based on perovskite films (PFs) suffer from surface and interface traps, which result from low crystalline quality of perovskite films and lattice mismatch between perovskite films and substrates. Herein, we fabricate MAPbI3 -(MA = CH3NH3) single-crystal films (SCFs) on MAPbBr3 single crystal substrates in MAPbI3 precursor solution during crystallization process via solution-processed epitaxy. Benefit from the good lattice matching, epitaxial MAPbI3 SCFs with high crystallinity and smooth morphology are of comparable quality to MAPbI3 PSCs and are of better quality than MAPbI3 polycrystalline films. Here we report that epitaxial MAPbI3 SCFs have a low trap density of 5.64×1011 cm–3 and a long carrier lifetime of 11.86 μs. In this work, photodetector based on epitaxial MAPbI3 single-crystal film (SCF) exhibits an excellent stability of a long-term stable response after 120 days, a fast response time of 2.21 μs, a high responsivity of 1.2 A W–1 and a high detectivity of 3.07 ×1012 jones.

Crystal Orientation Relationships among Acicular Ferrite, Oxide and the Austenite Matrix in a Steel Weld Metal

Acicular ferrite (AFα) formed on oxide particles in steel weld metals has a positive effect on toughness at low temperature. Good lattice coherency between AFα and oxide is one of the proposed reasons for promotion of AFα formation. Lattice coherency is affected by crystal structure of oxide and crystal orientation relationship (OR) between oxide and AFα. In the present study, ORs among AFα, oxide and γFe are investigated in a low carbon steel weld metal. Cube-cube (C-C) OR is observed between γFe and the oxide. It is probable that the oxide liquefied at high temperature, and then crystalized having the C-C OR with the surrounding γFe during cooling in welding process. Near Kurdjumov-Sachs (K-S) and near Baker-Nutting (B-N) ORs are observed between γFe/AFα and oxide/AFα, respectively. The misorientation from the B-N OR is larger than that from the K-S OR just after nucleation of AFα. This implies that AFα forms satisfying a near K-S OR with γFe essentially. It is supposed that formation of both the C-C (γFe/oxide) and near K-S (AFα/γ) ORs results in apparent formation of the near B-N OR between oxide and AFα.

Growth and Selective Etch of Phosphorus-Doped Silicon/Silicon–Germanium Multilayers Structures for Vertical Transistors Application

Vertical gate-all-around field-effect transistors (vGAAFETs) are considered as the potential candidates to replace FinFETs for advanced integrated circuit manufacturing technology at/beyond 3-nm technology node. A multilayer (ML) of Si/SiGe/Si is commonly grown and processed to form vertical transistors. In this work, the P-incorporation in Si/SiGe/Si and vertical etching of these MLs followed by selective etching SiGe in lateral direction to form structures for vGAAFET have been studied. Several strategies were proposed for the epitaxy such as hydrogen purging to deplete the access of P atoms on Si surface, and/or inserting a Si or Si0.93Ge0.07 spacers on both sides of P-doped Si layers, and substituting SiH4 by SiH2Cl2 (DCS). Experimental results showed that the segregation and auto-doping could also be relieved by adding 7% Ge to P-doped Si. The structure had good lattice quality and almost had no strain relaxation. The selective etching between P-doped Si (or P-doped Si0.93Ge0.07) and SiGe was also discussed by using wet and dry etching. The performance and selectivity of different etching methods were also compared. This paper provides knowledge of how to deal with the challenges or difficulties of epitaxy and etching of n-type layers in vertical GAAFETs structure.

Microstructure and Damage Evolution During Thermal Cycling of Sn-Ag-Cu Solders Containing Antimony

Antimony is attracting interest as an addition to Pb-free solders to improve thermal cycling performance in harsher conditions. Here, we investigate microstructure evolution and failure in harsh accelerated thermal cycling (ATC) of a Sn-3.8Ag-0.9Cu solder with 5.5 wt.% antimony as the major addition in two ball grid array (BGA) packages. SbSn particles are shown to precipitate on both Cu6Sn5 and as cuboids in β-Sn, with reproducible orientation relationships and a good lattice match. Similar to Sn-Ag-Cu solders, the microstructure and damage evolution were generally localised in the β-Sn near the component side where localised β-Sn misorientations and subgrains, accelerated SbSn and Ag3Sn particle coarsening, and β-Sn recrystallisation occurred. Cracks grew along the network of recrystallised grain boundaries to failure. The improved ATC performance is mostly attributed to SbSn solid-state precipitation within β-Sn dendrites, which supplements the Ag3Sn that formed in a eutectic reaction between β-Sn dendrites, providing populations of strengthening particles in both the dendritic and eutectic β-Sn.

Effect of Mg–Ti Treatment on Nucleation Mechanism of TiN Inclusions and Ferrite

Large sizes of columnar crystals and TiN particles have a great influence on the surface quality of ferritic stainless steel. In the present paper, this study proposed to obtain fine-grained equiaxed structures by Mg–Ti treatment. Through the experiment happened in resistance furnace with argon protection, the refining effect of Mg–Ti addition on the microstructure and TiN particles were investigated, and the refinement mechanism was discussed from interface coherence theory. It was found that due to adding Mg and Ti into molten ferritic stainless steel, the equiaxed crystal ratio increased from 37% to 50%, and the size of TiN particles reduced at the same time. The lattice matching characteristics of MgAl2O4/TiN and TiN/δ-Fe were investigated by FIB-HRTEM. According to Bramfitt’s equation, the lattice misfit for (400)MgAl2O4∥(200)TiN and (200)TiN∥(110)δ-Fe was 5.02% and 4.41%, respectively, which were all belong to the effective nucleation range. It could be considered that MgO and MgAl2O4 formed in the molten steel promoted TiN nucleation easier to precipitate out with large quantities in the liquid phase. The TiN particles with more uniform distribution significantly enhanced the heterogenous nucleation of ferritic phase during initial solidification process base on the good lattice fitting condition. Finally the equiaxed crystal ratio of δ-Fe phase increased dramatically.

Graphene Quantum Dots-Modified Ternary ZnCdS Semiconductor for Enhancing Photoelectric Properties

A series of graphene quantum dots-modified ZnCdS (ZnCdS/G) composites with different contents of graphene quantum dots (GQDs) were prepared by a solvothermal route and characterized via various measurements. GQDs have a type graphene height of 2 nm and exhibit an excitation-dependent PL behavior. GQDs-modified ZnCdS composites present good lattice fingers that can be assigned to the (110) plane of GQDs and (112) plane of ZnCdS. The effect of different GQDs contents on the photoelectric property of ZnCdS was investigated. The results show that the photocurrent density of ZnCdS/G first increases and achieves a maximum of 11.4 μA/cm2 with the addition of 0.06 wt% and then decreases as the GQDs content changes from 0.06 wt% to 0.12 wt%. Photocurrent counts as a function of time present a decrease of 10% and remains stable after 1600 s.