Leakage Current Characteristics of Ultra-Shallow Junctions formed by B2H6 Plasma Doping

2006 ◽  
Keyword(s):  
Leakage Current ◽  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Current Characteristics

Leakage Current Characteristics of Ultra-Shallow Junctions Formed by B2H6 Plasma Doping

2019 ◽  
Vol 3 (2) ◽  
pp. 57-65
Author(s):  
Hendriansyah Sauddin ◽  
Yuichiro Sasaki ◽  
Hiroyuki Ito ◽  
Bunji Mizuno ◽  
Parhat Ahmet ◽  
...  
Keyword(s):  
Leakage Current ◽  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions ◽  
Current Characteristics

Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques

2011 ◽  
Author(s):  
G. D. Papasouliotis ◽  
L. Godet ◽  
V. Singh ◽  
R. Miura ◽  
H. Ito ◽  
...  
Keyword(s):  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

The study of plasma doping process for ultra shallow junctions

2007 ◽  
Author(s):  
S.W. Lee ◽  
J.Y. Jeong ◽  
C.S. Park ◽  
J.H. Kim ◽  
J.Y. Ji ◽  
...  
Keyword(s):  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Ultra-shallow junctions produced by plasma doping and flash lamp annealing

2004 ◽  
Vol 114-115 ◽  
pp. 358-361 ◽  
Author(s):  
Wolfgang Skorupa ◽  
Rossen A. Yankov ◽  
Wolfgang Anwand ◽  
Matthias Voelskow ◽  
Thoralf Gebel ◽  
...  
Keyword(s):  
Flash Lamp ◽  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Plasma doping for ultra-shallow junctions

1998 ◽  
Vol 38 (9) ◽  
pp. 1485-1488 ◽  
Author(s):  
Chung Chan ◽  
Shu Qin
Keyword(s):  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions

Fabrication of N+/P ultra-shallow junctions by plasma doping for 65 nm CMOS technology

2004 ◽  
Vol 186 (1-2) ◽  
pp. 17-20 ◽  
Author(s):  
F Lallement ◽  
A Grouillet ◽  
M Juhel ◽  
J.-P Reynard ◽  
D Lenoble ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Plasma Doping ◽  
Shallow Junctions ◽  
Ultra Shallow Junctions
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