1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97
Latest Publications

TOTAL DOCUMENTS

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780338022

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

The integration of SnO/sub 2/ thin-film onto micro-hotplate for gas sensor applications

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642352 ◽

2002 ◽

Author(s):

Lie-Yi Sheng ◽

P.C.H. Chan ◽

J.K.O. Sin

Keyword(s):

Thin Film ◽

Gas Sensor ◽

Sensor Applications

Download Full-text

A high density IC compatible microtransducer/diaphragm design on micro-cavity SOI technology

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642351 ◽

2002 ◽

Author(s):

M.M.-O. Lee ◽

Yang-Ho Moon

Keyword(s):

High Density ◽

Micro Cavity ◽

Soi Technology

Download Full-text

n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642287 ◽

2002 ◽

Author(s):

B.L. Yang ◽

E.C. Jones ◽

N.W. Cheung ◽

Jiqun Shao ◽

H. Wong ◽

...

Keyword(s):

Ion Implantation ◽

Shallow Junction ◽

Junction Formation ◽

Plasma Immersion Ion Implantation

Download Full-text

In-plane and out-of-plane dielectric constant measurement techniques for sub-micron MOS devices

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642338 ◽

2002 ◽

Author(s):

Chua Chee Tee ◽

G. Sarkar ◽

S.C.Y. Meng ◽

D.L.H. Yu ◽

Lap Chan

Keyword(s):

Dielectric Constant ◽

Measurement Techniques ◽

Mos Devices ◽

Constant Measurement ◽

Out Of Plane ◽

Dielectric Constant Measurement

Download Full-text

Plasma doping for ultra-shallow junctions

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642026 ◽

2002 ◽

Author(s):

Chung Chan ◽

Shu Qin

Keyword(s):

Plasma Doping ◽

Shallow Junctions ◽

Ultra Shallow Junctions

Download Full-text

Breakdown of reoxidized nitrided oxide (ONO) in flash memory devices upon current stressing

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642337 ◽

2002 ◽

Cited By ~ 2

Author(s):

C.L. Cha ◽

E.F. Chor ◽

H. Gong ◽

A.Q. Zhang ◽

L. Chan

Keyword(s):

Flash Memory ◽

Memory Devices ◽

Current Stressing

Download Full-text

Industrial synthesis of PECVD silicon nitride passivation film

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642331 ◽

2002 ◽

Cited By ~ 1

Author(s):

Y.H. Tang

Keyword(s):

Silicon Nitride ◽

Passivation Film ◽

Industrial Synthesis

Download Full-text

Evidence of oxide charge trapping saturation induced by rapid thermal annealing

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642336 ◽

2002 ◽

Author(s):

M.S. Huang ◽

S.C. Wong ◽

C.Y. Sun ◽

L.M. Liu

Keyword(s):

Thermal Annealing ◽

Rapid Thermal Annealing ◽

Charge Trapping ◽

Oxide Charge

Download Full-text

Thermal modeling of micro-hotplates for integrated sensor applications

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642353 ◽

2002 ◽

Cited By ~ 1

Author(s):

D.T.W. Wong ◽

P.C.H. Chan ◽

Lie-Yi Sheng ◽

J.K.O. Sin

Keyword(s):

Thermal Modeling ◽

Integrated Sensor ◽

Sensor Applications

Download Full-text

Merged technology on MEMS

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97 ◽

10.1109/hkedm.1997.642349 ◽

2002 ◽

Cited By ~ 1

Author(s):

M.M.O. Lee

Download Full-text

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

The integration of SnO/sub 2/ thin-film onto micro-hotplate for gas sensor applications

A high density IC compatible microtransducer/diaphragm design on micro-cavity SOI technology

n/sup +//p ultra-shallow junction formation with plasma immersion ion implantation

In-plane and out-of-plane dielectric constant measurement techniques for sub-micron MOS devices

Plasma doping for ultra-shallow junctions

Breakdown of reoxidized nitrided oxide (ONO) in flash memory devices upon current stressing

Industrial synthesis of PECVD silicon nitride passivation film

Evidence of oxide charge trapping saturation induced by rapid thermal annealing

Thermal modeling of micro-hotplates for integrated sensor applications

Merged technology on MEMS

1997 IEEE Hong Kong Proceedings Electron Devices Meeting HKEDM-97
Latest Publications