Electrical and Materials Characterization of HfO2 and ZrO2 Thin Films for
High-K Gate Applications Deposited by ALD in a 300 mm Reactor
2010 ◽
Vol 94
(1)
◽
pp. 250-254
◽
Shiow-Huey Chuang
◽
Min-Lung Hsieh
◽
Shih-Chieh Wu
◽
Hong-Cai Lin
◽
Tien-Sheng Chao
◽
...
D. J. HYMES
◽
J. J. ROSENBERG
1994 ◽
Vol 6
(5)
◽
pp. 422-422
2002 ◽
Vol 80
(7)
◽
pp. 1249-1251
◽
Yong Jai Cho
◽
N. V. Nguyen
◽
C. A. Richter
◽
J. R. Ehrstein
◽
Byoung Hun Lee
◽
...
Momoko Takemura
◽
Hideyuki Yamazaki
◽
Hirobumi Ohmori
◽
Masahiko Yoshiki
◽
Shiro Takeno
◽
...
T. Kanashima
◽
S. Kaitai
◽
M. Sohgawa
◽
H. Kanda
◽
M. Okuyama
2019 ◽
Vol 35
(2)
◽
pp. 297-304
◽
Shojan P. Pavunny
◽
R. Thomas
◽
T.S. Kalkur
◽
Jurgen Schubert
◽
E. Fachini
◽
...
Satoshi Kitai
◽
Osamu Maida
◽
Takeshi Kanashima
◽
Masanori Okuyama