Photoelectrochemical Performance of Ag-TiO2 Thin Films Mounted on FTO Prepared by Sol-gel Spin Coating

2019 ◽  
Vol 7 (1) ◽  
pp. 28
Author(s):  
KOMARAIAH DURGAM ◽  
RADHA EPPA ◽  
REDDY M. V. RAMANA ◽  
KUMAR J. SIVA ◽  
R. SAYANNA ◽  
...  

2010 ◽  
Vol 09 (04) ◽  
pp. 355-358 ◽  
Author(s):  
T. S. SENTHIL ◽  
M. THAMBIDURAI ◽  
N. MUTHUKUMARASAMY ◽  
R. BALASUNDARAPRABHU

TiO2 thin films have been deposited onto well cleaned glass substrates by sol–gel spin coating method. The prepared TiO2 films have been annealed at different temperatures (350°C, 450°C and 550°C). The structural properties of the films have been studied using X-ray diffraction method and High Resolution Transmission Electron Microscope (HRTEM). The as-deposited films have been found to be amorphous in nature. The crystalline quality has been observed to improve with annealing temperature. The annealed TiO2 films have been found to exhibit anatase phase. The optical properties have been studied using transmittance spectrum.


2011 ◽  
Vol 312-315 ◽  
pp. 1027-1031
Author(s):  
Mohd Noor Asiah ◽  
Mat Zain Basri ◽  
Mohamad Rusop

This paper investigated the electrical properties of nanostructured Titanium Dioxide (TiO2) thin films prepared by the sol-gel method at different annealing temperatures. The precursor used was Titanium (IV) butoxide at concentration of 0.4 M. The TiO2 thin films were deposited on the glass and silicon substrates by using the spin coating technique. The influence of annealing temperatures on the electrical, structural, surface morphology and optical properties of the films were characterized by I-V measurement, X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and UV-Vis Spectroscopy, respectively. It was found that the electrical properties of TiO2¬ thin films were changed due to the changes of annealing temperatures. As the annealing temperatures rises, the resistivity of the film found to be decreased. The result also shows that films which does not applied annealing temperature called as deposited were found to be amorphous while the films with annealing temperature T = 350oC and above became crystalline structure. The anatase phase can be obtained at annealing temperatures from T = 350oC up to T = 500oC.


2011 ◽  
Vol 36 (6) ◽  
pp. 4130-4133 ◽  
Author(s):  
A. Elfanaoui ◽  
E. Elhamri ◽  
L. Boulkaddat ◽  
A. Ihlal ◽  
K. Bouabid ◽  
...  

2013 ◽  
Vol 667 ◽  
pp. 371-374 ◽  
Author(s):  
M. Basri ◽  
Mohd Nor Asiah ◽  
Mohd Khairul bin Ahmad ◽  
Mohamad Hafiz Mamat ◽  
Mohamad Rusop Mahmood

Titanium Dioxide (TiO2) thin films have been prepared on glass substrates by using sol-gel method and spin-coating technique. The samples have been annealed at temperatures of 350°C ~ 500oC. The electrical and structural properties of the thin films due to the changes of annealing treatment process were investigated by 2 point probes I-V measurement and X-ray Diffraction (XRD) respectively. The result show that resistivity of the thin film decreased with annealing temperatures. XRD characterization indicates crystalline structure of TiO2 thin films improved as annealed at higher temperatures.


2021 ◽  
pp. 4425-4429
Author(s):  
Rajaa Obayes Abdulsada ◽  
Thamir A.A. Hassan

   In this study, titanium dioxide (TiO2 (are synthesized by sol– gel simple method. Thin films of sol, gel, and sol- gel on relatively flat glass substrates are applied with Spin coating technique with multilayers. The optical and morphological properties (studied using AFM) of TiO2 layers show good properties, with particles diameters less than 4 nm for all prepared samples and have maximum length 62 nm for TiO2 gel thin films of three layers. The results show low roughness values for all films especially for 4 layers sol (8.37nm), which improve the application in dye sensitive solar cell (DSSc)         .  


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