Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

2012 ◽  
Keyword(s):  
Tungsten Carbide ◽  
Interface Properties ◽  
Gate Electrode ◽  
Mos Capacitors

Interface Properties La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

2013 ◽  
Vol 50 (4) ◽  
pp. 281-284
Author(s):  
K. Tuokedaerhan ◽  
R. Tan ◽  
K. Kakushima ◽  
P. Ahmet ◽  
Y. Kataoka ◽  
...  
Keyword(s):  
Tungsten Carbide ◽  
Interface Properties ◽  
Gate Electrode ◽  
Mos Capacitors

Reliability of La-Silicate MOS Capacitors with Tungsten Carbide Gate Electrode for Scaled EOT

2013 ◽  
Vol 58 (7) ◽  
pp. 61-64
Author(s):  
S. Hosoda ◽  
K. Tuokedaerhan ◽  
K. Kakushima ◽  
Y. Kataoka ◽  
A. Nishiyama ◽  
...  
Keyword(s):  
Tungsten Carbide ◽  
Gate Electrode ◽  
Mos Capacitors

Atomically flat La-silicate/Si interface using tungsten carbide gate electrode with nano-sized grain

2014 ◽  
Vol 104 (2) ◽  
pp. 021601 ◽  
Author(s):  
K. Tuokedaerhan ◽  
K. Kakushima ◽  
Y. Kataoka ◽  
A. Nishiyama ◽  
N. Sugii ◽  
...  
Keyword(s):  
Tungsten Carbide ◽  
Gate Electrode ◽  
Atomically Flat

Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2

2004 ◽  
Vol 457-460 ◽  
pp. 1309-1312 ◽  
Author(s):  
W. Wang ◽  
S. Banerjee ◽  
T. Paul Chow ◽  
Ronald J. Gutmann ◽  
Tamara Isaacs-Smith ◽  
...  
Keyword(s):  
Interface Properties ◽  
Mos Capacitors

SiO2/SiC Interface Properties on Various Surface Orientations

2002 ◽  
Vol 742 ◽  
Author(s):  
Hiroshi Yano ◽  
Taichi Hirao ◽  
Tsunenobu Kimoto ◽  
Hiroyuki Matsunami
Keyword(s):  
Conduction Band ◽  
Room Temperature ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Band Edge ◽  
Conduction Band Edge ◽  
Interface Properties ◽  
Mos Capacitors ◽  
Channel Mobility

ABSTRACTThe interface properties of MOS capacitors and MOSFETs were characterized using the (0001), (1120), and (0338) faces of 4H-SiC. (0001) and (1120) correspond to (111) and (110) in cubic structure. (0338) is semi-equivalent to (100). The interface states near the conduction band edge are discussed based on the capacitance and conductance measurements of n-type MOS capacitors at a low temperature and room temperature. The (0338) face indicated the smallest interface state density near the conduction band edge and highest channel mobility in n-channel MOSFETs among these faces.

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