(Invited) First-Principles Understanding of Deep-Level Defects and Impurities in GaN and Nitride Alloys

2020 ◽  
Vol MA2020-02 (26) ◽  
pp. 1822-1822
Author(s):  
JOHN L Lyons ◽  
Evan Glaser ◽  
Darshana Wickramaratne ◽  
Audrius Alkauskas ◽  
Cyrus Dreyer ◽  
...  
Keyword(s):  
First Principles ◽  
Deep Level ◽  
Defects And Impurities ◽  
Nitride Alloys

scholarly journals Defect identification based on first-principles calculations for deep level transient spectroscopy

2018 ◽  
Vol 113 (19) ◽  
pp. 192106 ◽  
Author(s):  
Darshana Wickramaratne ◽  
Cyrus E. Dreyer ◽  
Bartomeu Monserrat ◽  
Jimmy-Xuan Shen ◽  
John L. Lyons ◽  
...  
Keyword(s):  
First Principles ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
First Principles Calculations ◽  
Defect Identification ◽  
Transient Spectroscopy

First-principles study of defects and carrier compensation in semiconductor radiation detector materials

2009 ◽  
Vol 1164 ◽  
Author(s):  
Mao-Hua Du ◽  
Hiroyuki Takenaka ◽  
David Joseph Singh
Keyword(s):  
Hydrogen Atom ◽  
Fermi Level ◽  
First Principles ◽  
Radiation Detector ◽  
Defect Engineering ◽  
Fermi Level Pinning ◽  
Excellent Candidate ◽  
Anion Site ◽  
Defects And Impurities ◽  
Detector Materials

AbstractWe discuss defect engineering strategies in radiation detector materials. The goal is to increase resistivity by defect-induced Fermi level pinning without causing defect-induced reductions in the carrier drifting length. We show calculated properties of various intrinsic defects and impurities in CdTe. We suggest that the defect complex of a hydrogen atom and an isovalent impurity on an anion site may be an excellent candidate in many semiconductors for Fermi level pinning without carrier trapping.

scholarly journals Deep‐Level Defects and Impurities in InGaN Alloys

2020 ◽  
Vol 257 (4) ◽  
pp. 1900534
Author(s):  
Darshana Wickramaratne ◽  
Cyrus E. Dreyer ◽  
Jimmy-Xuan Shen ◽  
John L. Lyons ◽  
Audrius Alkauskas ◽  
...  
Keyword(s):  
Deep Level ◽  
Defects And Impurities ◽  
Ingan Alloys

scholarly journals Engineering the electronic bandgaps and band edge positions in carbon-substituted 2D boron nitride: a first-principles investigation

2015 ◽  
Vol 17 (20) ◽  
pp. 13547-13552 ◽  
Author(s):  
Sharmila N. Shirodkar ◽  
Umesh V. Waghmare ◽  
Timothy S. Fisher ◽  
Ricardo Grau-Crespo
Keyword(s):  
Boron Nitride ◽  
First Principles ◽  
Band Alignment ◽  
Band Edge ◽  
Nitride Alloys

Band alignment of 2D carbon–boron nitride alloys informs routes toward applications in photocatalysis and electronics.

scholarly journals Large piezoelectric response of quarternary wurtzite nitride alloys and its physical origin from first principles

2015 ◽  
Vol 92 (17) ◽  
Author(s):  
C. Tholander ◽  
F. Tasnádi ◽  
I. A. Abrikosov ◽  
L. Hultman ◽  
J. Birch ◽  
...  
Keyword(s):  
First Principles ◽  
Piezoelectric Response ◽  
Physical Origin ◽  
Nitride Alloys

scholarly journals Insight into point defects and impurities in titanium from first principles

2018 ◽  
Vol 4 (1) ◽  
Author(s):  
Sanjeev K. Nayak ◽  
Cain J. Hung ◽  
Vinit Sharma ◽  
S. Pamir Alpay ◽  
Avinash M. Dongare ◽  
...  
Keyword(s):  
Point Defects ◽  
First Principles ◽  
Defects And Impurities ◽  
Insight Into

First principles studies of point defects and impurities in cubic boron nitride

1998 ◽  
Vol 51 (1-3) ◽  
pp. 53-57 ◽  
Author(s):  
J.L.P Castineira ◽  
J.R Leite ◽  
L.M.R Scolfaro ◽  
R Enderlein ◽  
J.L.A Alves ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Point Defects ◽  
First Principles ◽  
Cubic Boron Nitride ◽  
Defects And Impurities
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