Deep‐Level Defects and Impurities in InGaN Alloys

AbstractConventional deep level transient spectroscopy (DLTS) and high-resolution Laplace DLTS techniques were used to study electrical properties of deep-level defects in dilute GaNAs epitaxial layers grown by atmospheric-pressure metalorganic vapourphase epitaxy (APMOVPE) on the GaAs substrate. Three samples with nitrogen concentrations of 1.2 %, 1.6 % and 2.7 % were investigated. In DLTS and LDLTS spectra of the samples, four predominant electron traps were observed. On the basis of the obtained electrical parameters and previously published results, one of the traps was associated with N-related complex defects, while the other traps with common GaAs-like native defects and impurities, called EL6, EL3 and EL2.

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Atomic Hydrogen Passivation of High Energy Hydrogen Implants

MRS Proceedings ◽

10.1557/proc-223-241 ◽

1991 ◽

Vol 223 ◽

Author(s):

K. Srikanth ◽

J. Shenal ◽

S. Ashok

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

High Energy ◽

Low Energy ◽

Hydrogen Ion ◽

Hydrogen Passivation ◽

Ion Proton ◽

Proton Implantation ◽

Defects And Impurities ◽

Transient Spectroscopy

ABSTRACTHigh-energy hydrogen ion (proton) implantation is used in Si for creating defects, while low-energy H is known for passivation of a variety of defects and impurities. We have carried out a study of low-energy (<0.4 keV) H passivation of defects produced by 100 keV H implantation. Both Schottky barrier transport and deep level transient spectroscopy measurements give evidence for self-passivation of defects produced by H.

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(Invited) First-Principles Understanding of Deep-Level Defects and Impurities in GaN and Nitride Alloys

ECS Meeting Abstracts ◽

10.1149/ma2020-02261822mtgabs ◽

2020 ◽

Vol MA2020-02 (26) ◽

pp. 1822-1822

Author(s):

JOHN L Lyons ◽

Evan Glaser ◽

Darshana Wickramaratne ◽

Audrius Alkauskas ◽

Cyrus Dreyer ◽

...

Keyword(s):

First Principles ◽

Deep Level ◽

Defects And Impurities ◽

Nitride Alloys

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ELECTRON HOLE INTERACTION IN DEEP LEVEL SPECTRA

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1978414 ◽

1978 ◽

Vol 39 (C4) ◽

pp. C4-112-C4-119 ◽

Cited By ~ 5

Author(s):

C. KUNZ

Keyword(s):

Deep Level ◽

Electron Hole ◽

Hole Interaction

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LUMINESCENCE AND DEEP LEVEL STUDIES OF LINE DISLOCATIONS IN GALLIUM PHOSPHIDE

Le Journal de Physique Colloques ◽

10.1051/jphyscol:1983428 ◽

1983 ◽

Vol 44 (C4) ◽

pp. C4-233-C4-241

Author(s):

B. Hamilton ◽

A. R. Peaker ◽

D. R. Wight

Keyword(s):

Gallium Phosphide ◽

Deep Level

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Persistent Photoconductivity And Thermal Recovery Kinetics Of Low Energy Ar + Bombarded GaAs

MRS Proceedings ◽

10.1557/proc-223-203 ◽

1991 ◽

Vol 223 ◽

Author(s):

A. Vaseashta ◽

L. C. Burton

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Thermal Recovery ◽

Low Energy ◽

Persistent Photoconductivity ◽

Transport Parameters ◽

Excellent Correlation ◽

Proposed Model ◽

Transient Spectroscopy ◽

Kinetics Of

ABSTRACTKinetics of persistent photoconductivity, photoquenching, and thermal and optical recovery observed in low energy Ar+ bombarded on (100) GaAs surfaces have been investigated. Rate and transport equations for these processes were derived and simulated employing transport parameters, trap locations and densities determined by deep level transient spectroscopy. Excellent correlation was obtained between the results of preliminary simulation and the experimentally observed values. The exponential decay of persistent photoconductivity response curve was determined to be due to metastable electron traps with longer lifetime and is consistent with an earlier proposed model.

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Deep level study in epitaxial 4H-SiC grown on substrates inclined toward

MRS Proceedings ◽

10.1557/proc-719-f8.11 ◽

2002 ◽

Vol 719 ◽

Cited By ~ 1

Author(s):

Masashi Kato ◽

Masaya Ichimura ◽

Eisuke Arai ◽

Shigehiro Nishino

Keyword(s):

Deep Level Transient Spectroscopy ◽

Deep Level ◽

Activation Energies ◽

Thickness Dependence ◽

Epitaxial Layers ◽

Transient Spectroscopy

AbstractEpitaxial layers of 4H-SiC are grown on (0001) substrates inclined toward <1120> and <1100> directions. Defects in these films are characterized by deep level transient spectroscopy (DLTS) in order to clarify the dependence of concentrations and activation energies on substrate inclination. DLTS results show no such dependence on substrate inclination but show thickness dependence of the concentration.

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Spectrum of Defect States in Porous Organic Low-k Dielectric Films, Annealed in Argon and Nitrogen

MRS Proceedings ◽

10.1557/proc-766-e8.5 ◽

2003 ◽

Vol 766 ◽

Author(s):

V. Ligatchev ◽

T.K.S. Wong ◽

T.K. Goh ◽

Rusli Suzhu Yu

Keyword(s):

Deep Level ◽

Dielectric Films ◽

Silicon Substrates ◽

Reverse Bias Voltage ◽

Defect States ◽

Single Side ◽

Sandwich Type ◽

Transient Spectroscopy ◽

P Type ◽

Spectrum Deconvolution

AbstractDefect spectrum N(E) of porous organic dielectric (POD) films is studied with capacitance deep-level-transient-spectroscopy (C-DLTS) in the energy range up to 0.7 eV below conduction band bottom Ec. The POD films were prepared by spin coating onto 200mm p-type (1 – 10 Δcm) single-side polished silicon substrates followed by baking at 325°C on a hot plate and curing at 425°C in furnace. The film thickness is in the 5000 – 6000 Å range. The ‘sandwich’ -type NiCr/POD/p-Si/NiCr test structures showed both rectifying DC current-voltage characteristics and linear 1/C2 vs. DC reverse bias voltage. These confirm the applicability of the C-DLTS technique for defect spectrum deconvolution and the n-type conductivity of the studied films. Isochronal annealing (30 min in argon or 60 min in nitrogen) has been performed over the temperature range 300°C - 650°C. The N(E) distribution is only slightly affected by annealing in argon. However, the distribution depends strongly on the annealing temperature in nitrogen ambient. A strong N(E) peak at Ec – E = 0.55 – 0.60 eV is detected in all samples annealed in argon but this peak is practically absent in samples annealed in nitrogen at Ta < 480°C. On the other hand, two new peaks at Ec – E = 0.12 and 0.20 eV appear in the N(E) spectrum of the samples annealed in nitrogen at Ta = 650°C. The different features of the defect spectrum are attributed to different interactions of argon and nitrogen with dangling carbon bonds on the intra-pore surfaces.

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EXPERIMENTAL VERIFICATION OF DLTS MODELS

CAD/EDA, MODELING AND SIMULATION IN MODERN ELECTRONICS: COLLECTION OF SCIENTIFIC PAPERS OF THE III INTERNATIONAL SCIENTIFIC AND PRACTICAL CONFERENCE ◽

10.30987/conferencearticle_5e028210b72ba9.48046910 ◽

2019 ◽

Author(s):

Nataliya Mitina ◽

Vladimir Krylov

Keyword(s):

Activation Energy ◽

Gallium Arsenide ◽

Data Processing ◽

Experimental Verification ◽

Deep Level ◽

Deep Levels ◽

Transient Spectroscopy

The results of an experiment to determine the activation energy of a deep level in a gallium arsenide mesastructure, obtained by the method of capacitive deep levels transient spectroscopy with data processing according to the Oreshkin model and Lang model, are considered.

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