scholarly journals Prospects of Back Surface Field Effect in Ultra-Thin High-Efficiency CdS/CdTe Solar Cells from Numerical Modeling

2010 ◽  
Vol 2010 ◽  
pp. 1-8 ◽  
Author(s):  
Nowshad Amin ◽  
M. A. Matin ◽  
M. M. Aliyu ◽  
M. A. Alghoul ◽  
M. R. Karim ◽  
...  

Polycrystalline CdTe shows greater promises for the development of cost-effective, efficient, and reliable thin film solar cells. Results of numerical analysis using AMPS-1D simulator in exploring the possibility of ultrathin, high efficiency, and stable CdS/CdTe cells are presented. The conventional baseline case structure of CdS/CdTe cell has been explored with reduced CdTe absorber and CdS window layer thickness, where 1 μm thin CdTe and 50 nm CdS layers showed reasonable efficiencies over 15%. The viability of 1 μm CdTe absorber layer together with possible back surface field (BSF) layers to reduce minority carrier recombination loss at the back contact in ultra thin CdS/CdTe cells was investigated. Higher bandgap material like ZnTe and low bandgap materials like Sb2Te3and As2Te3as BSF were inserted to reduce the holes barrier height in the proposed ultra thin CdS/CdTe cells. The proposed structure of SnO2/Zn2SnO4/CdS/CdTe/As2Te3/Cu showed the highest conversion efficiency of 18.6% (Voc= 0.92 V,Jsc= 24.97 mA/cm2, and FF = 0.81). However, other proposed structures such as SnO2/Zn2SnO4/CdS/CdTe/Sb2Te3/Mo and SnO2/Zn2SnO4/CdS/CdTe/ZnTe/Al have also shown better stability at higher operating temperatures with acceptable efficiencies. Moreover, it was found that the cells normalized efficiency linearly decreased with the increased operating temperature with relatively lower gradient, which eventually indicates better stability of the proposed ultra thin CdS/CdTe cells.

Molecules ◽  
2021 ◽  
Vol 26 (11) ◽  
pp. 3275
Author(s):  
Devendra KC ◽  
Deb Kumar Shah ◽  
M. Shaheer Akhtar ◽  
Mira Park ◽  
Chong Yeal Kim ◽  
...  

This paper numerically explores the possibility of ultrathin layering and high efficiency of graphene as a back surface field (BSF) based on a CdTe solar cell by Personal computer one-dimensional (PC1D) simulation. CdTe solar cells have been characterized and studied by varying the carrier lifetime, doping concentration, thickness, and bandgap of the graphene layer. With simulation results, the highest short-circuit current (Isc = 2.09 A), power conversion efficiency (h = 15%), and quantum efficiency (QE ~ 85%) were achieved at a carrier lifetime of 1 × 103 ms and a doping concentration of 1 × 1017 cm−3 of graphene as a BSF layer-based CdTe solar cell. The thickness of the graphene BSF layer (1 mm) was proven the ultrathin, optimal, and obtainable for the fabrication of high-performance CdTe solar cells, confirming the suitability of graphene material as a BSF. This simulation confirmed that a CdTe solar cell with the proposed graphene as the BSF layer might be highly efficient with optimized parameters for fabrication.


Solar Cells ◽  
1982 ◽  
Vol 7 (3) ◽  
pp. 331-336 ◽  
Author(s):  
J. Nijs ◽  
J. Van Meerbergen ◽  
F. D'Hoore ◽  
R. Mertens ◽  
R. Van Overstraeten

Solar Cells ◽  
1981 ◽  
Vol 3 (4) ◽  
pp. 337-340 ◽  
Author(s):  
A. Cuevas ◽  
A. Luque ◽  
J. Eguren ◽  
J. Del Alamo

2019 ◽  
Vol 8 (4) ◽  
pp. 6218-6222

In this study, numerical simulation has been executed using Solar Cell Capacitance Simulator (SCAPS-1D) to study the prospect of favourable efficiency and stable CdS/CdTe cell in various cell configurations. A basic structure of CdS/CdTe cell is studied with 4 µm CdTe as absorber layer, 100 nm tin oxide (SnO2 ) as front contact and 25 nm cadmium sulfides (CdS) as buffer layer. Four back surface fields (BSF) layers namely ZnTe, ZnTe: Cu, Cu2Te and MoTe2 are investigated to reduce the minority carrier recombination at back contact. The cell structure of glass/SnO2 /CdS/CdTe/MoTe2 has shown a nearly ohmic contact with CdTe with the highest efficiency of 17.02% (Voc=0.91 V, Jsc=24.79 mA/cm2 , FF=75.41). Simulation results have verified that MoTe2 as BSF layer is appropriate for an efficient CdS/CdTe cell. Moreover, it is found that a few nanometres (about 40 nm) of BSF layer are enough to achieve high efficiency. For MoTe2 layer, more than 17% efficiency has been achieved compared to other BSF layers.


Sign in / Sign up

Export Citation Format

Share Document