scholarly journals The Synthesis of NiO/TiO2Heterostructures and Their Valence Band Offset Determination

2014 ◽  
Vol 2014 ◽  
pp. 1-6 ◽  
Author(s):  
Z. H. Ibupoto ◽  
M. A. Abbasi ◽  
X. Liu ◽  
M. S. AlSalhi ◽  
M. Willander

In this work, a heterojunction based on p-type NiO/n-type TiO2nanostructures has been prepared on the fluorine doped tin oxide (FTO) glass substrate by hydrothermal method. Scanning electron microscopy (SEM) and X-Ray diffraction techniques were used for the morphological and crystalline arrays characterization. The X-ray photoelectron spectroscopy was employed to determine the valence-band offset (VBO) of the NiO/TiO2heterojunction prepared on FTO glass substrate. The core levels of Ni 2p and Ti 2p were utilized to align the valence-band offset of p-type NiO/n-type TiO2heterojunction. The valence band offset was found to be∼0.41 eV and the conduction band was calculated about∼0.91 eV. The ratio of conduction band offset and the valence-band offset was found to be 2.21.

2009 ◽  
Vol 1165 ◽  
Author(s):  
Rodrigo Sáez-Araoz ◽  
Iver Lauermann ◽  
Axel Neisser ◽  
Martha Ch Lux-Steiner ◽  
Ahmed Ennaoui

AbstractWe report on the chemical deposition and electronic properties of CuInS2/Zn(S,O) interfaces. The Zn(S,O) buffer was grown by a new chemical bath deposition (CBD) process that allows the tailoring of the S/O ratio in the films. Resulting Zn(S,O) films exhibit transparencies above 80% (for λ>390 nm) and an optical energy band gap of 3.9 eV which decreases to 3.6 eV after annealing in air at 200°C. Production line CuInS2 (CIS) absorbers provided by Sulfurcell Solartechnik GmbH are used as substrates for the investigation of the CIS/Zn(S,O) interface and the chemical composition of Zn(S,O). A ZnS/(ZnS+ZnO) ratio of 0.5 is found by X-ray photoelectron spectroscopy and X-ray excited Auger electron spectroscopy (XPS and XAES). The valence band offset between the heterojunction partners (ΔEV = 1.8 ± 0.2 eV) has been determined by means of XPS and ultraviolet photoelectron spectroscopy (UPS). Considering the energy band gap of the CIS absorber and the measured band gap of Zn(S,O), the conduction band offset (ΔEC) is calculated as: resulting in a spike of 0.5±0.3 eV in the conduction band at the heterojunction before annealing. After the heat treatment, the valence band offset is reduced to 1.5±0.2 eV and the calculated conduction band offset remains at 0.5±0.3 eV.


2009 ◽  
Vol 94 (2) ◽  
pp. 022108 ◽  
Author(s):  
R. Deng ◽  
B. Yao ◽  
Y. F. Li ◽  
Y. M. Zhao ◽  
B. H. Li ◽  
...  

2007 ◽  
Vol 90 (13) ◽  
pp. 132105 ◽  
Author(s):  
P. D. C. King ◽  
T. D. Veal ◽  
P. H. Jefferson ◽  
C. F. McConville ◽  
T. Wang ◽  
...  

2019 ◽  
Vol 114 (1) ◽  
pp. 011603 ◽  
Author(s):  
Guo-Dong Hao ◽  
Sachiko Tsuzuki ◽  
Shin-ichiro Inoue

2008 ◽  
Vol 93 (8) ◽  
pp. 082108 ◽  
Author(s):  
S. C. Su ◽  
Y. M. Lu ◽  
Z. Z. Zhang ◽  
C. X. Shan ◽  
B. H. Li ◽  
...  

2010 ◽  
Vol 27 (6) ◽  
pp. 067302 ◽  
Author(s):  
Guo Yan ◽  
Liu Xiang-Lin ◽  
Song Hua-Ping ◽  
Yang An-Li ◽  
Zheng Gao-Lin ◽  
...  

2008 ◽  
Vol 92 (4) ◽  
pp. 042906 ◽  
Author(s):  
P. F. Zhang ◽  
X. L. Liu ◽  
R. Q. Zhang ◽  
H. B. Fan ◽  
H. P. Song ◽  
...  

2010 ◽  
Vol 256 (23) ◽  
pp. 7327-7330 ◽  
Author(s):  
Gaolin Zheng ◽  
Jun Wang ◽  
Xianglin Liu ◽  
Anli Yang ◽  
Huaping Song ◽  
...  

2011 ◽  
Vol 6 (1) ◽  
pp. 316 ◽  
Author(s):  
Caihong Jia ◽  
Yonghai Chen ◽  
Yan Guo ◽  
Xianglin Liu ◽  
Shaoyan Yang ◽  
...  

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