scholarly journals High gain over an octave bandwidth class-F RF power amplifier design using 10W GaN HEM

2020 ◽  
Vol 9 (5) ◽  
pp. 1899-1906
Author(s):  
Noor Syakirah Ruslan Hadi ◽  
Zubaida Yusoff ◽  
Md. Golam Sadeque ◽  
Shaiful Jahari Hashim ◽  
Muhammad Akmal Chaudhary
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
High Gain ◽  
Base Station ◽  
Rf Power ◽  
Large Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Flat Gain ◽  
Class F

The wireless communication industry grows faster each day. In terms of RF power amplifier (RFPA), the requirements on efficiency, linearity, bandwidth, output power and cost are getting more stringent. RFPA is considered as the most important component because of consuming large power in a base station. In this paper, a systematic approach is used to design a high flat gain class-F RFPA over an octave bandwidth. The simulation of a 1.5GHz class-F power amplifier mode demonstrates a high drain efficiency while accomplishing a high flat gain over a wide bandwidth. To identify the optimum impedance for the output matching and input matching network, the load-pull and source-pull are performed. The simulation results show that the RFPA can deliver a drain efficiency of 68.37 % at the output power of 40.79 dBm with power added efficiency of 66.94 %. The designed PA achieved a high gain between 13 dB to 17 dB from 0.5 GHz to 2.0 GHz of a frequency band. The matching circuits are realized on an FR-4 substrate to keep the cost as low as possible. A 10W GaN HEMT CGH40010 transistor from Cree has been used for this RFPA design.

scholarly journals 0.5 GHz-1.5 GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design

2018 ◽  
Vol 8 (3) ◽  
pp. 1837
Author(s):  
Shiva Ghandi Isma Ilamaran ◽  
Zubaida Yusoff ◽  
Jahariah Sampe
Keyword(s):  
Power Amplifier ◽  
Communication Technology ◽  
Rf Power ◽  
Power Added Efficiency ◽  
Rf Power Amplifier ◽  
Gan Hemt ◽  
Input And Output ◽  
Flat Gain ◽  
Amplifier Design ◽  
Load Pull

With the current development in wireless communication technology, the need for a wide bandwith in RF power amplifier (RF PA) is an essential. In this paper, the design and simulation of 10W GaN HEMT wideband RF PA will be presented. The Source-Pull and Load-Pull technique was used to design the input and output matching network of the RF PA. From the simulation, the RF PA achieved a flat gain between 15dB to 17dB from 0.5GHz to 1.5GHz. At 1.5GHz, the drain efficiency is simulated to achieve 36% at the output power of 40 dBm while the power added efficiency (PAE) was found to be 28.2%.

A NOVEL ADAPTIVE CURRENT BIASED LINEAR RADIO-FREQUENCY POWER AMPLIFIER ON SIGE HBT PROCESS

2010 ◽  
Vol 19 (05) ◽  
pp. 1077-1088 ◽  
Author(s):  
TUO WU ◽  
HONGYI CHEN ◽  
DAHONG QIAN
Keyword(s):  
Radio Frequency ◽  
Output Power ◽  
Power Amplifier ◽  
The Novel ◽  
Rf Power ◽  
Sige Hbt ◽  
Rf Power Amplifier ◽  
Class A ◽  
Test Verification ◽  
Frequency Power

A novel adaptive current biased CLASS-A/shallow AB RF power amplifier is demonstrated in this paper. By theoretical deduction, a prototype is described to improve the linearity of a linear PA. With the realization on Jazz 0.35 μm SiGe HBT process and test verification, the novel adaptive current biased RF power amplifier shows 3 ~ 7 dB improvement of the ACPR at the output power of 19 dBm to meet the demand of CDMA IS95 spectrum mask without debasing the efficiency.

scholarly journals A highly efficient 3.5 GHz inverse class-F GaN HEMT power amplifier

2010 ◽  
Vol 2 (3-4) ◽  
pp. 317-324 ◽  
Author(s):  
Paul Saad ◽  
Christian Fager ◽  
Hossein Mashad Nemati ◽  
Haiying Cao ◽  
Herbert Zirath ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Continuous Wave ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Power Added Efficiency ◽  
Average Ratio ◽  
Gan Hemt ◽  
Continuous Wave Signal ◽  
Class F

This paper presents the design and implementation of an inverse class-F power amplifier (PA) using a high power gallium nitride high electron mobility transistor (GaN HEMT). For a 3.5 GHz continuous wave signal, the measurement results show state-of-the-art power-added efficiency (PAE) of 78%, a drain efficiency of 82%, a gain of 12 dB, and an output power of 12 W. Moreover, over a 300 MHz bandwidth, the PAE and output power are maintained at 60% and 10 W, respectively. Linearized modulated measurements using 20 MHz bandwidth long-term evolution (LTE) signal with 11.5 dB peak-to-average ratio show that −42 dBc adjacent channel power ratio (ACLR) is achieved, with an average PAE of 30%, −47 dBc ACLR with an average PAE of 40% are obtained when using a WCDMA signal with 6.6 dB peak-to-average ratio (PAR).

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