Growth of Textured Nanocrystalline Cobalt Ferrite Thin Films by Pulsed Laser Deposition

2008 ◽  
Vol 8 (8) ◽  
pp. 4135-4140 ◽  
Author(s):  
Lakshmikanta Aditya ◽  
A. Srivastava ◽  
S. K. Sahoo ◽  
P. Das ◽  
C. Mukherjee ◽  
...  

Cobalt ferrite thin films have been deposited on fused quartz substrates by pulsed laser deposition at various substrate temperatures, TS (25 °C, 300 °C, 550 °C and 750 °C). Single phase, nanocrystalline, spinel cobalt ferrite formation is confirmed by X-ray diffraction (XRD) for TS ≥ 300 °C. Conventional XRD studies reveal strong (111) texturing in the as deposited films with TS ≥ 550 °C. Bulk texture measurements using X-ray orientation distribution function confirmed (111) preferred orientation in the films with TS ≥ 550 °C. Grain size (13–16 nm for TS ≥ 300 °C) estimation using grazing incidence X-ray line broadening analysis shows insignificant grain growth with increasing TS, which is in good agreement with grain size data obtained from transmission electron microscopy.

2019 ◽  
Vol 45 (16) ◽  
pp. 20165-20171 ◽  
Author(s):  
G. Bulai ◽  
V. Trandafir ◽  
S.A. Irimiciuc ◽  
L. Ursu ◽  
C. Focsa ◽  
...  

2013 ◽  
Vol 5 (15) ◽  
pp. 7450-7457 ◽  
Author(s):  
Devajyoti Mukherjee ◽  
Mahesh Hordagoda ◽  
Robert Hyde ◽  
Nicholas Bingham ◽  
Hariharan Srikanth ◽  
...  

2007 ◽  
Vol 515 (5) ◽  
pp. 2943-2948 ◽  
Author(s):  
R. Sayed Hassan ◽  
N. Viart ◽  
C. Ulhaq-Bouillet ◽  
J.L. Loison ◽  
G. Versini ◽  
...  

2013 ◽  
Vol 278 ◽  
pp. 38-42 ◽  
Author(s):  
Georgiana Dascalu ◽  
Gloria Pompilian ◽  
Bertrand Chazallon ◽  
Ovidiu Florin Caltun ◽  
Silviu Gurlui ◽  
...  

2017 ◽  
Vol 432 ◽  
pp. 391-395 ◽  
Author(s):  
Nipa Debnath ◽  
Takahiko Kawaguchi ◽  
Wataru Kumasaka ◽  
Harinarayan Das ◽  
Kazuo Shinozaki ◽  
...  

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.


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