Mn Concentration and Quantum Size Effects on Spin-Polarized Transport Through CdMnTe Based Magnetic Resonant Tunneling Diode

2012 ◽  
Vol 12 (11) ◽  
pp. 8791-8796 ◽  
Author(s):  
S. Mnasri ◽  
S. Abdi-Ben Nasrallah ◽  
N. Sfina ◽  
J.-L. Lazzari ◽  
M. Saïd
2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA

2002 ◽  
Vol 09 (03n04) ◽  
pp. 1485-1491 ◽  
Author(s):  
R. ZDYB ◽  
E. BAUER

We have studied the spin-dependent quantum size effects in the reflection of 0–20 eV electrons from 2–10-ML-thick Fe microcrystals grown in situ on a W(110) surface in a spin-polarized low energy electron microscope. The goal is to obtain a better understanding of the magnetic ("asymmetry") image contrast and of the limits of spin polarization devices based on the quantum size contrast. The contrast is interpreted in terms of the band structure and of the spin-dependent inelastic mean free path. For the figure of merit of spin polarization devices, an upper limit of 5 × 10-2 is obtained.


2001 ◽  
Vol 284 (4-5) ◽  
pp. 205-215 ◽  
Author(s):  
Yong Guo ◽  
Jun-Qiang Lu ◽  
Zhong Zeng ◽  
Qian Wang ◽  
Bing-Lin Gu ◽  
...  

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