scholarly journals Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode

2009 ◽  
Vol 58 (5) ◽  
pp. 3397
Author(s):  
Tang Nai-Yun
2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA

2009 ◽  
Vol 94 (17) ◽  
pp. 172501 ◽  
Author(s):  
Jiqing Wang ◽  
Yan Liu ◽  
Huibing Mao ◽  
Qiang Zhao ◽  
Jianguo Yu ◽  
...  

2013 ◽  
Vol 774-776 ◽  
pp. 691-694
Author(s):  
Nai Yun Tang

Influence of polarization effect on current across GaN/AlNresonant tunneling diode (RTD) is simulated by self-consistent calculations ofSchrödinger and Poisson equations. When taking into account polarization chargesat the heterointerface, the band diagram and electronic properties of RTD areobviously changed. As a result, the current-voltage characteristics showsasymmetrical phenomenon. As the polarization effect is enhanced, the resonancepeak is shifted accordingly and even disappears.


2007 ◽  
Vol 90 (12) ◽  
pp. 122109 ◽  
Author(s):  
A. Slobodskyy ◽  
C. Gould ◽  
T. Slobodskyy ◽  
G. Schmidt ◽  
L. W. Molenkamp ◽  
...  

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