Piezoelectric polarization and quantum size effects on the vertical transport in AlGaN/GaN resonant tunneling diodes

2016 ◽  
Vol 25 (6) ◽  
pp. 067304 ◽  
Author(s):  
H Dakhlaoui ◽  
S Almansour
Keyword(s):  
Size Effects ◽  
Resonant Tunneling ◽  
Vertical Transport ◽  
Quantum Size Effects ◽  
Resonant Tunneling Diodes ◽  
Piezoelectric Polarization ◽  
Tunneling Diodes ◽  
Quantum Size

Vertical transport in group III-nitride heterostructures and application in AlN/GaN resonant tunneling diodes

2004 ◽  
Vol 1 (8) ◽  
pp. 2210-2227 ◽  
Author(s):  
M. Hermann ◽  
E. Monroy ◽  
A. Helman ◽  
B. Baur ◽  
M. Albrecht ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Vertical Transport ◽  
Resonant Tunneling Diodes ◽  
Group Iii ◽  
Tunneling Diodes ◽  
Group Iii Nitride

Observation of strain-relaxation-induced size effects inp-type Si/SiGe resonant-tunneling diodes

1998 ◽  
Vol 57 (12) ◽  
pp. 7132-7140 ◽  
Author(s):  
P. W. Lukey ◽  
J. Caro ◽  
T. Zijlstra ◽  
E. van der Drift ◽  
S. Radelaar
Keyword(s):  
Size Effects ◽  
Resonant Tunneling ◽  
Strain Relaxation ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Vertical Transport in GaN/AlGaN Resonant Tunneling Diodes and Superlattices

2012 ◽  
Vol 41 (5) ◽  
pp. 965-970 ◽  
Author(s):  
Elias Warde ◽  
Salam Sakr ◽  
Maria Tchernycheva ◽  
Francois Henry Julien
Keyword(s):  
Resonant Tunneling ◽  
Vertical Transport ◽  
Resonant Tunneling Diodes ◽  
Tunneling Diodes

Search for quantum size effects in ultrathin epitaxial metallic films

1991 ◽  
Vol 16 (6) ◽  
pp. 623-638 ◽  
Author(s):  
P.A. Badoz ◽  
F. Arnaud d'Avitaya ◽  
E. Rosencher
Keyword(s):  
Size Effects ◽  
Quantum Size Effects ◽  
Metallic Films ◽  
Quantum Size
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