The Effect of Homogenous and Inhomogeneous Broadening and Gain Compression Factor on Dynamical Characteristics and Modulation of Tunneling Injection InGaAs/GaAs Quantum Dot Lasers

2016 ◽  
Vol 11 (4) ◽  
pp. 489-496 ◽  
Author(s):  
Esfandiar Rajaei ◽  
Yasin Yekta Kia
Keyword(s):  
Quantum Dot ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Gain Compression ◽  
Dynamical Characteristics ◽  
Compression Factor ◽  
Tunneling Injection ◽  
Gaas Quantum Dot ◽  
Gain Compression Factor

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

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