scholarly journals Effect of Chemical Pressure at the Boundary of Mott Insulator to Itinerant Electron Limit Transition in Spinel Vanadates

2015 ◽  
Vol 7 (6) ◽  
pp. 1187-1196 ◽  
Author(s):  
P. Shahi ◽  
A. Kumar ◽  
Rahul Singh ◽  
Ripandeep Singh ◽  
P. U. Sastry ◽  
...  
Keyword(s):  
Mott Insulator ◽  
Itinerant Electron ◽  
Limit Transition ◽  
Chemical Pressure

Transport, magnetic and structural properties of Mott insulator MnV2O4 at the boundary between localized and itinerant electron limit

2014 ◽  
Vol 49 (20) ◽  
pp. 7317-7324 ◽  
Author(s):  
Prashant Shahi ◽  
Saurabh Kumar ◽  
Neetika Sharma ◽  
Ripandeep Singh ◽  
P. U. Sastry ◽  
...  
Keyword(s):  
Structural Properties ◽  
Mott Insulator ◽  
Itinerant Electron

scholarly journals Chemical tuning of the molecular quantum materials κ-[(BEDT-TTF)1-x(BEDT-STF)x]2Cu2(CN)3: from Mott-insulating quantum spin liquid to metallic Fermi liquid

2021 ◽  
Author(s):  
Yohei Saito ◽  
Roland Rösslhuber ◽  
Anja Löhle ◽  
Miriam Sanz Alonso ◽  
Maxim Wenzel ◽  
...  
Keyword(s):  
Phase Transition ◽  
Electronic Properties ◽  
Fermi Liquid ◽  
Mott Insulator ◽  
Quantum Spin ◽  
Spin Liquid ◽  
Molecular Conductors ◽  
Chemical Pressure ◽  
Metal Phase Transition ◽  
Quantum Spin Liquid

The electronic properties of molecular conductors can be readily varied via physical or chemical pressure as it increases the bandwidth W; this enables crossing the Mott insulator-to-metal phase transition by...

1H-NMR study of Mott insulator κ -(ET)2Cu2(CN)3with isotropic triangular lattice

2004 ◽  
Vol 114 ◽  
pp. 377-378 ◽  
Author(s):  
Y. Shimizu ◽  
K. Miyagawa ◽  
K. Oda ◽  
K. Kanoda ◽  
M. Maesato ◽  
...  
Keyword(s):  
1H Nmr ◽  
Triangular Lattice ◽  
Mott Insulator ◽  
Nmr Study

scholarly journals Drastic improvement of Curie temperature by chemical pressure in N-type diluted magnetic semiconductor Ba(Zn,Co)$$_{2}$$As$$_{2}$$

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Licheng Fu ◽  
Yilun Gu ◽  
Guoxiang Zhi ◽  
Haojie Zhang ◽  
Rufei Zhang ◽  
...  
Keyword(s):  
Unit Cell Volume ◽  
Diluted Magnetic Semiconductor ◽  
Magnetic Semiconductor ◽  
Vital Role ◽  
Ferromagnetic Transition ◽  
Chemical Pressure ◽  
Tetragonal Crystal ◽  
Tetragonal Crystal Structure ◽  
Diluted Magnetic ◽  
Ferromagnetic Ordering

AbstractWe report the effect of chemical pressure on the ferromagnetic ordering of the recently reported n-type diluted magnetic semiconductor Ba(Zn$$_{1-x}$$ 1 - x Co$$_{x}$$ x )$$_{2}$$ 2 As$$_{2}$$ 2 which has a maximum $$T_C$$ T C $$\sim$$ ∼ 45 K. Doping Sb into As-site and Sr into Ba-site induces negative and positive chemical pressure, respectively. While conserving the tetragonal crystal structure and n-type carriers, the unit cell volume shrink by $$\sim$$ ∼ 0.3$$\%$$ % with 15$$\%$$ % Sr doping, but drastically increase the ferromagnetic transition temperature by 18$$\%$$ % to 53 K. Our experiment unequivocally demonstrate that the parameters of Zn(Co)As$$_{4}$$ 4 tetrahedra play a vital role in the formation of ferromagnetic ordering in the Ba(Zn,Co)$$_{2}$$ 2 As$$_{2}$$ 2 DMS.

scholarly journals Two-component electronic phase separation in the doped Mott insulator Y1−xCaxTiO3

2021 ◽  
Vol 104 (4) ◽  
Author(s):  
S. Hameed ◽  
J. Joe ◽  
D. M. Gautreau ◽  
J. W. Freeland ◽  
T. Birol ◽  
...  
Keyword(s):  
Phase Separation ◽  
Mott Insulator ◽  
Electronic Phase Separation ◽  
Electronic Phase ◽  
Two Component ◽  
Doped Mott Insulator
Sign in / Sign up

Export Citation Format

Share Document