Observation of Possible Nonlinear Anomalous Hall Effect in Organic Two-Dimensional Dirac Fermion System

We report the observation of nonlinear anomalous Hall effect (NLAHE) in the multilayered organic conductor α-(BEDT-TTF)2I3 in the charge order (CO) insulating phase just under the critical pressure for transition into two-dimensional (2D) massless Dirac fermion (DF) phase. We successfully extracted the finite nonlinear Hall voltage proportional to square current at zero magnetic field. The observed NLAHE features, current direction dependence and correlation with CO, are consistent with the previous estimation assuming 2D massive DF with a pair of tilted Dirac cones. This is the first observation of topological transport in organic conductors, and also the first example of NLAHE in the electronic phase with spontaneous symmetry breaking.

Spatially-resolved electronic structure of stripe domains in IrTe2 through electronic structure microscopy

Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Resolving the electronic structure with spatially-resolved information is critical for revealing the fundamental physics of such inhomogeneous systems yet this is challenging experimentally. Here by using nanometer- and micrometer-spot angle-resolved photoemission spectroscopies (NanoARPES and MicroARPES), we reveal the spatially-resolved electronic structure in the stripe phase of IrTe2. Each separated domain shows two-fold symmetric electronic structure with the mirror axis aligned along 3 equivalent directions, and 6 × 1 replicas are clearly identified. Moreover, such electronic structure inhomogeneity disappears across the stripe phase transition, suggesting that electronic phase with broken symmetry induced by the 6 × 1 modulation is directly related to the stripe phase transition of IrTe2. Our work demonstrates the capability of NanoARPES and MicroARPES in elucidating the fundamental physics of phase-separated materials.

Electric Double Layer Doping of Charge-Ordered Insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3

Field-effect transistors based on strongly correlated insulators are an excellent platform for studying the electronic phase transition and simultaneously developing phase transition transistors. Molecular conductors are suitable for phase transition transistors owing to the high tunability of the electronic states. Molecular Mott transistors show field-induced phase transitions including superconducting transitions. However, their application to charge-ordered insulators is limited. In this study, we fabricated electric double layer transistors based on quarter-filled charge-ordered insulators α-(BEDT-TTF)2I3 and α-(BETS)2I3. We observed ambipolar field effects in both compounds where both electron and hole doping (up to the order of 1013 cm−2) reduces the resistance by the band filling shift from the commensurate value. The maximum field-effect mobilities are approximately 10 and 55 cm2/Vs, and the gate-induced conductivities are 0.96 and 3.6 e2/h in α-(BEDT-TTF)2I3 and α-(BETS)2I3, respectively. However, gate-induced metallic conduction does not emerge. The gate voltage dependence of the activation energy in α-(BEDT-TTF)2I3 and the Hall resistance in α-(BETS)2I3 imply that the electric double layer doping in the present experimental setup induces hopping transport rather than band-like two-dimensional transport.