scholarly journals Effects of Pupil Center Shift on Ocular Aberrations

2014 ◽  
Vol 55 (9) ◽  
pp. 5862 ◽  
Author(s):  
David A. Atchison ◽  
Ankit Mathur
2008 ◽  
Vol 24 (5) ◽  
pp. 530-538 ◽  
Author(s):  
Uzeyir Erdem ◽  
Orkun Muftuoglu ◽  
Fatih Çakir Gundogan ◽  
Gungor Sobaci ◽  
Atilla Bayer

2014 ◽  
Vol 30 (10) ◽  
pp. 694-700 ◽  
Author(s):  
Imene Salah Mabed ◽  
Alain Saad ◽  
Emmanuel Guilbert ◽  
Damien Gatinel

Sensors ◽  
2021 ◽  
Vol 21 (14) ◽  
pp. 4698
Author(s):  
Xian Yue ◽  
Yaliang Yang ◽  
Fei Xiao ◽  
Hao Dai ◽  
Chao Geng ◽  
...  

Virtual Shack–Hartmann wavefront sensing (vSHWS) can flexibly adjust parameters to meet different requirements without changing the system, and it is a promising means for aberration measurement. However, how to optimize its parameters to achieve the best performance is rarely discussed. In this work, the data processing procedure and methods of vSHWS were demonstrated by using a set of normal human ocular aberrations as an example. The shapes (round and square) of a virtual lenslet, the zero-padding of the sub-aperture electric field, sub-aperture number, as well as the sequences (before and after diffraction calculation), algorithms, and interval of data interpolation, were analyzed to find the optimal configuration. The effect of the above optimizations on its anti-noise performance was also studied. The Zernike coefficient errors and the root mean square of the wavefront error between the reconstructed and preset wavefronts were used for performance evaluation. The performance of the optimized vSHWS could be significantly improved compared to that of a non-optimized one, which was also verified with 20 sets of clinical human ocular aberrations. This work makes the vSHWS’s implementation clearer, and the optimization methods and the obtained results are of great significance for its applications.


2018 ◽  
Vol 32 (30) ◽  
pp. 1850340 ◽  
Author(s):  
Mahmoud Zolfaghari

With the help of temperature dependence, Raman scattering anharmonic effect of various modes of layered semiconductor InSe over temperature range of 20–650 K has been studied. It was found that with an increase in temperature, anharmonicity will increase. Two and three phonons coupling with optical phonon, are used to describe temperature-induced anharmonicity in the linewidth of Raman modes. It was found that the temperature variation of the phonon parameter can be accounted for well by the cubic term in anharmonic model. To describe line-center shift of Raman modes, a model not considering independently cubic and quartic anharmonicity was used. A similar study has been done for InSe doped with different concentration of GaS dopant. The result of temperature study of InSe doped with GaS revealed that in this case anharmonicity increases with an increase in dopant and an increase in temperature.


Author(s):  
Radovan Fusek ◽  
Eduard Sojka ◽  
Michael Holusa
Keyword(s):  

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