Effects of annealing treatment on growth of rutile TiO2nanorods on structural, morphological and optical properties of TiO2nanorods were investigated. The nanorods were fabricated on p-type (111)-oriented silicon substrates and, all substrates were seeded with a TiO2seed layer synthesized by radio-frequency reactive magnetron sputtering system. Chemical bath deposition (CBD) was carried out to grow rutile TiO2nanorods on Si substrate at different annealing temperatures (350, 550, 750, and 950 °C). Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analyses showed the tetragonal rutile structure of the synthesized TiO2nanorods. Optical properties were examined by photoluminescence spectroscopy. The spectra exhibit one strong UV emission peak which can be seen at around 390 nm for all of the samples. In the visible region, TiO2demonstrated two dominant PL emissions centered at around 519 and 705 nm. The experimental results showed that the TiO2nanorods annealed at 550 °C exhibited the optimal structural properties. Moreover, the CBD method enabled the formation of photosensitive, high-quality rutile TiO2nanorods with few defects for future optoelectronic nanodevice applications.
The effects of porosity on optical properties of semiconductor chalcogenide films obtained by the chemical bath deposition