Growth of Rutile TiO2 Nanorods by Chemical Bath Deposition Method on Silicon Substrate at Different Annealing Temperature

2014 ◽  
Vol 624 ◽  
pp. 129-133 ◽  
Author(s):  
Abbas M. Selman ◽  
Zainuriah Hassan
Keyword(s):  
Optical Properties ◽  
Chemical Bath Deposition ◽  
Visible Region ◽  
Annealing Treatment ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Rutile Structure ◽  
Uv Emission ◽  
Cbd Method ◽  
P Type

Effects of annealing treatment on growth of rutile TiO2nanorods on structural, morphological and optical properties of TiO2nanorods were investigated. The nanorods were fabricated on p-type (111)-oriented silicon substrates and, all substrates were seeded with a TiO2seed layer synthesized by radio-frequency reactive magnetron sputtering system. Chemical bath deposition (CBD) was carried out to grow rutile TiO2nanorods on Si substrate at different annealing temperatures (350, 550, 750, and 950 °C). Raman spectroscopy, X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) analyses showed the tetragonal rutile structure of the synthesized TiO2nanorods. Optical properties were examined by photoluminescence spectroscopy. The spectra exhibit one strong UV emission peak which can be seen at around 390 nm for all of the samples. In the visible region, TiO2demonstrated two dominant PL emissions centered at around 519 and 705 nm. The experimental results showed that the TiO2nanorods annealed at 550 °C exhibited the optimal structural properties. Moreover, the CBD method enabled the formation of photosensitive, high-quality rutile TiO2nanorods with few defects for future optoelectronic nanodevice applications.

Analysis of Optical Properties and Structure for CdS Films

2005 ◽  
Vol 475-479 ◽  
pp. 3721-3724
Author(s):  
W.L. Wang ◽  
K.J. Liao ◽  
Jian Zhang ◽  
P. Yu ◽  
G.B. Liu
Keyword(s):  
Optical Properties ◽  
Chemical Bath Deposition ◽  
Photoelectron Spectroscopy ◽  
Annealing Treatment ◽  
Oxide Content ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Transparent Glass ◽  
X Ray ◽  
Cds Films

In this paper, the optical properties and structure of CdS films were investigated by SEM, X-ray diffraction, and x-ray photoelectron spectroscopy. The CdS films in this study were deposited on the plane transparent glass by chemical bath deposition technique. The experimental results have shown that the annealing treatment has an important effect on the optical properties and structure of CdS films. This may be ascribed to decreasing surface contaminations and oxide content in the films.

Effect of Different Radios of Two Complexes on the Structural and Optical Properties of ZnS Thin Films

2014 ◽  
Vol 986-987 ◽  
pp. 47-50
Author(s):  
Jin Shang ◽  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Visible Region ◽  
Deposition Process ◽  
X Ray Diffraction ◽  
High Concentration ◽  
Structural And Optical Properties ◽  
Glass Substrates ◽  
Direct Band ◽  
Cbd Method

ZnS thin films were deposited at three different radios of V(NH3·H2O)/V(N2H4) on glass substrates by chemical bath deposition (CBD) method without stirring the deposition bath during the deposition process. The structural and optical properties were analyzed by X-ray diffraction (XRD) and UV-VIS spectrophotometer. The results showed that ZnS thin film deposited at the radio of V(NH3·H2O)/V(N2H4)=15:15 is higher than that of the other two different solutions. With the radio of V(NH3·H2O)/V(N2H4) decreasing from 15:5 to 15:15, homogenous precipitation of Zn (OH)2easily forms in the bath, but ZnS precipitation first become suppressed and then easily forms in solution. It means that the concentration of OH-ion increases with the volume of N2H4increasing, which accelerates the formation of Zn (OH)2. However, when the volume of N2H4increases to 15mL, relatively high concentration of OH-ion not only accelerates the formation of Zn (OH)2, but also be used to the hydrolysis of thiourea. The average transmissions of all the ZnS films from three different solutions (V(NH3·H2O)/V(N2H4)=15:5, 15:10 and 15:15) are greater than 90% for wavelength values in visible region. The direct band gaps range from 3.80 to 4.0eV. The ZnS film deposited for 2.5h with the radio of V(NH3·H2O)/V(N2H4)=15:15 has the cubic structure only after single deposition.

A PbS Film Synthesized by Ultrasonic Wave Assisted Chemical Bath Deposition Method and its Application in Photoelectrochemical Cell

2013 ◽  
Vol 820 ◽  
pp. 3-6 ◽  
Author(s):  
Zhong Biao Zhao ◽  
Peng Wang ◽  
Li Bo Fan ◽  
Zi Fa Chen ◽  
Dong Luo Yang
Keyword(s):  
Ultrasonic Wave ◽  
Chemical Bath Deposition ◽  
Conduction Mechanism ◽  
Photoelectrochemical Cell ◽  
X Ray Diffraction ◽  
Ito Glass ◽  
Cbd Method ◽  
P Type ◽  
Deposited Films ◽  
Type Conduction

A Lead sulfide (PbS) film synthesized by ultrasonic wave assisted chemical bath deposition (CBD) method. The as-deposited films were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) measurements. The photoelectrochemical (PEC) cell, with PbS/ITO/glass as a photo cathode and Na2SO4 (0.10 M) solution as an electrolyte, was constructed and investigated for PEC properties. The film shows a p-type conduction mechanism.

scholarly journals Study on the Electrical, Structural, Chemical and Optical Properties of PVD Ta(N) Films Deposited with Different N2 Flow Rates

Coatings ◽  
2021 ◽  
Vol 11 (8) ◽  
pp. 937
Author(s):  
Yingying Hu ◽  
Md Rasadujjaman ◽  
Yanrong Wang ◽  
Jing Zhang ◽  
Jiang Yan ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Crystal Size ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
Flow Rates ◽  
X Ray ◽  
N2 Flow Rate

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta(N) films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects of N2 flow rate on the electrical properties, crystal structure, elemental composition, and optical properties of Ta(N) were studied. These properties were characterized by the four-probe method, X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and spectroscopic ellipsometry (SE). Results show that the deposition rate decreases with an increase of N2 flows. Furthermore, as resistivity increases, the crystal size decreases, the crystal structure transitions from β-Ta to TaN(111), and finally becomes the N-rich phase Ta3N5(130, 040). Studying the optical properties, it is found that there are differences in the refractive index (n) and extinction coefficient (k) of Ta(N) with different thicknesses and different N2 flow rates, depending on the crystal size and crystal phase structure.

ANNEALING TIME EFFECT ON NANOSTRUCTURED n-ZnO/p-Si HETEROJUNCTION PHOTODETECTOR PERFORMANCE

2015 ◽  
Vol 22 (02) ◽  
pp. 1550027 ◽  
Author(s):  
NADIR. F. HABUBI ◽  
RAID. A. ISMAIL ◽  
WALID K. HAMOUDI ◽  
HASSAM. R. ABID
Keyword(s):  
Annealing Time ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Zno Nps ◽  
Force Microscopy ◽  
Atomic Force ◽  
Junction Type ◽  
P Type ◽  
Quartz Substrates ◽  
Two Peaks

In this work, n- ZnO /p- Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15–60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm–99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm–2.16 nm. Dark and under illumination current–voltage (I–V) characteristics of the n- ZnO /p- Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance–voltage (C–V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO / Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12–0.19 A/W and 0.18–0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Structural and Optical Properties of Al Co-Doped ZnCoO Thin Film

2014 ◽  
Vol 989-994 ◽  
pp. 656-659
Author(s):  
Ping Cao ◽  
Yue Bai
Keyword(s):  
Thin Film ◽  
Optical Properties ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Al Doping ◽  
X Ray ◽  
Uv Emission ◽  
Uv Absorption Spectroscopy ◽  
Co Doped

Al co-doped ZnCoO thin film has been prepared by a sol-gel method. The structural and optical properties of the sample were investigated. X-ray diffraction and UV absorption spectroscopy analyses indicate that Al3+ and Co2+ substitute for Zn2+ without changing the wurtzite structure. With the Al doping, the visible emission increased and the UV emission decreased, which is attributed to the increase of O vacancies and Zn interstitials.

Effects of As Doping on Properties of ZnO Films

2001 ◽  
Vol 692 ◽  
Author(s):  
K. S. Huh ◽  
D. K. Hwang ◽  
K. H. Bang ◽  
M. K. Hong ◽  
D. H. Lee ◽  
...  
Keyword(s):  
Optical Properties ◽  
Secondary Ion Mass Spectrometry ◽  
Annealing Treatment ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Electrical And Optical Properties ◽  
As Doping ◽  
Dopant Atoms ◽  
Increasing Temperature ◽  
Secondary Ion

AbstractA series of ZnO thin films with various deposition temperatures were prepared on (100) GaAs substrates by radio-frequency magnetron sputtering using ZnO target. The ZnO films were studied by field emission scanning electron microscope(FESEM), x-ray diffraction(XRD), photoluminescence(PL), cathodoluminescence(CL), and Hall measurements. The structural, optical, and electrical properties of the films were discussed as a function of the deposition temperature. With increasing temperature, the compressive stress in the films was released and their crystalline and optical properties were improved. From the depth profile of As measured by secondary ion mass spectrometry(SIMS), As doping was confirmed, and, in order to activate As dopant atoms, post-annealing treatment was performed. After annealing treatment, electrical and optical properties of the films were changed.

The Sensitivity of V2O5:Sm2O3 Thin Films against NO2 Toxic Gas

2021 ◽  
Vol 19 (3) ◽  
pp. 69-77
Author(s):  
A.J. Noori ◽  
R.A. Ahmed ◽  
I.M. Ibrahim
Keyword(s):  
Thin Films ◽  
Energy Gap ◽  
Homogeneous Distribution ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Laser Method ◽  
Operation Temperature ◽  
Best Response ◽  
Diffraction Peaks ◽  
P Type

Vanadium oxide V2O5 thin films with variation doping ratios of Sm2O5 (2, 4, 6, and 8 % wt.) on corn glass and p- type silicon substrates were prepared by pulsed laser method. The X-ray diffraction peaks for V2O5 decreases with doping ratio of Sm2O3. FESEM images for V2O5 and doped thin films illustrates clusters with a homogeneous distribution in nano scale. The energy gap varied upon the increment of doping concentration, starting from 2.610 eV to 2.7 eV. Gas sensor measurement of pure and doped V2O5 demonstrated a sensitivity to NO2 gas, and the sensitivity expanded upon the increment of operation temperature. The greatest sensitivity was found to be about 99%, while best response time of 10s and recovery time of 18s were recorded using the 4% Sm2O3 sample at 50 °C.

Formation of p-type Cu3BiS3 absorber thin films by annealing chemically deposited Bi2S3–CuS thin films

1997 ◽  
Vol 12 (3) ◽  
pp. 651-656 ◽  
Author(s):  
P. K. Nair ◽  
L. Huang ◽  
M. T. S. Nair ◽  
Hailin Hu ◽  
E. A. Meyers ◽  
...  
Keyword(s):  
Thin Films ◽  
Visible Region ◽  
Atomic Diffusion ◽  
Optical Coatings ◽  
X Ray Diffraction ◽  
X Ray ◽  
Cell Structures ◽  
Potential Applications ◽  
Xrd Patterns ◽  
P Type

Formation of the ternary compound Cu3BiS3 during annealing of chemically deposited CuS (∼0.3 μm) films on Bi2S3 film (∼0.1 μm on glass substrate) is reported. The interfacial atomic diffusion leading to the formation of the compound during the annealing is indicated in x-ray photoelectron depth profile spectra of the films. The formation of Cu3BiS3 (Wittichenite, JCPDS 9-488) is confirmed by the x-ray diffraction (XRD) patterns. The films are optically absorbing in the entire visible region (absorption coefficient 4 × 104 cm−1 at 2.48 eV or 0.50 μm) and are p-type with electrical conductivity of 102−103 Ω−1 cm−1. Potential applications of these films as optical coatings in the control of solar energy transmittance through glazings and as a p-type absorber film in solar cell structures are indicated.

Optical Properties of Nanostructured Zinc Oxides Deposited on Silicon Substrates

2011 ◽  
Vol 312-315 ◽  
pp. 1132-1136 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Zuraida Khusaimi ◽  
Mohamad Mahmood Rusop
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spin Coating ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Silicon Substrates ◽  
Annealing Temperatures ◽  
Uv Emission ◽  
Zinc Oxides ◽  
Optically Transparent

Nanostructured zinc oxide (ZnO) thin films were prepared through sol-gel method and spin-coating technique. ZnO thin films then were annealed at temperature of 350°C, 400°C, 450°C and 500°C. The thin films were characterized using field emission scanning electron microscope (FESEM), UV-VIS-NIR spectrophotometer and photoluminescence (PL) spectrofluorometer for morphology and optical properties study. The morphology study indicates that the particle size of ZnO increased with annealing temperatures. All thin films are optically transparent (~ 80 % in transmittance) in the visible light-NIR region. PL spectra reveal improved UV emission with annealing temperatures up to 500°C.

Sign in / Sign up

Export Citation Format

Share Document