scholarly journals The Determination of the “Flat-band” Potential of Nitrogen-stabilized n-TiO2Photoanode

1981 ◽  
Vol 54 (2) ◽  
pp. 509-512 ◽  
Author(s):  
Taketsugu Hirai ◽  
Isao Tari ◽  
Tsutomu Ohzuku
2019 ◽  
Author(s):  
Kunjal Patel ◽  
G. K. Solanki ◽  
K. D. Patel ◽  
Pratik Pataniya ◽  
V. M. Pathak ◽  
...  

2018 ◽  
Vol 122 (5) ◽  
pp. 2796-2805 ◽  
Author(s):  
Hendrik Naatz ◽  
Ron Hoffmann ◽  
Andreas Hartwig ◽  
Fabio La Mantia ◽  
Suman Pokhrel ◽  
...  

1990 ◽  
Vol 35 (2) ◽  
pp. 345-349 ◽  
Author(s):  
P. Herrasti ◽  
E. Fatás ◽  
J. Herrero ◽  
J. Ortega

1988 ◽  
Vol 110 (1) ◽  
pp. 293-299 ◽  
Author(s):  
R. Srivastava ◽  
V. M. Pathak ◽  
V. V. Rao

1989 ◽  
Vol 67 (3) ◽  
pp. 382-388 ◽  
Author(s):  
O. Savadogo

Modification of several semiconductors material surfaces with H4SiW12O40•nH2O have been carried out to produce an increase in the open circuit photopotential at the semiconductor/electrolyte interface (Voc) without changing the flat-band potential. The augmentation of Voc is shown to be attributed to a decrease of the minority carriers recombination at the semiconductor/electrolyte interface along with the suppression of Fermi level pinning. The enhancement of Voc and the electrocatalytic activity of the hydrogen evolution reaction in acidic medium of the derivatized electrodes is attributed to the Fermi level unpinning. Keywords: photoelectrodes, photoelectrocatalysis, pinning, modification improvement.


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