flat band potential
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Author(s):  
T. Shiyani ◽  
I. Banerjee ◽  
Santosh K. Mahapatra ◽  
Asim K. Ray

AbstractPhotoelectrochemical properties have been investigated for flexible photoelectrodes containing 310 nm thick ZnO film on spin-coated ITO/PET. The high crystalline structure of ZnO was studied using x-ray diffraction pattern. A value of 3.4 eV has been estimated for optical band gap from its absorption spectra. The flexible ZnO photoelectrode was demonstrated to generate photoelectrochemical current. The photocurrents are enhanced by 4% whereas flat-band potential is shifted by 8 V due to the illumination. Values of 1.022 and 0.714 AW−1 were found to be for photo switching and photoresponsivity, respectively. ZnO/ITO/PET can be used as a substrate for making flexible hybrid PEC devices to generate solar power and solar fuels.


2020 ◽  
Vol 10 (10) ◽  
pp. 3567
Author(s):  
Feng Cheng ◽  
Xiuwei Li

Co-doped and Ni-doped hematite (α-Fe2O3) nanorod arrays were prepared on fluorine-doped tin oxide (FTO) conductive glass via aqueous chemical growth, in which the doping and the formation of nanorods occurred simultaneously (i.e., in situ doping). These samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), ultraviolet (UV)–visible spectrophotometry, linear sweep voltammetry and Mott–Schottky (M–S) measurement. Results showed that the introduction of 5% Co or Ni into α-Fe2O3 (the molar ratio of dopant to Fe is 1:20) did not change its crystal phase, morphology, energy gap and flat band potential. Both the undoped and the doped α-Fe2O3 showed a direct band gap of 2.24 eV, an indirect band gap of 1.85 eV, and a flat band potential of −0.22 V vs. saturated calomel electrode (SCE). At an applied potential of 0.2 V vs. SCE, the Co-doped and the Ni-doped α-Fe2O3 exhibited a photocurrent of 1.28 mA/cm2 and 0.79 mA/cm2, respectively, which were 2.1 times and 1.3 times that of the undoped α-Fe2O3. After the Co or Ni doping, the charge carrier concentration increased from 1.65 × 1025 m−3 to 3.74 × 1025 m−3 and 2.50 × 1025 m−3, respectively. Therefore, the increase in the photocurrent of the doped α-Fe2O3 was likely attributed to their enhanced conductivity.


2020 ◽  
Vol 22 (35) ◽  
pp. 19631-19642
Author(s):  
Botong Miao ◽  
Kassoum Sangaré ◽  
Asif Iqbal ◽  
Benoît Marsan ◽  
Kirk H. Bevan

A first-order approach is presented to estimate the doping concentration and flat band potential of a semiconductor photoanode subject to surface states.


2019 ◽  
Vol 123 (14) ◽  
pp. 8681-8687 ◽  
Author(s):  
Yongze Yu ◽  
Kevin A. Click ◽  
Szu-Chia Chien ◽  
Jiaonan Sun ◽  
Allison Curtze ◽  
...  

2019 ◽  
Author(s):  
Kunjal Patel ◽  
G. K. Solanki ◽  
K. D. Patel ◽  
Pratik Pataniya ◽  
V. M. Pathak ◽  
...  

2019 ◽  
Vol 7 (45) ◽  
pp. 26162-26176 ◽  
Author(s):  
Anna Hankin ◽  
Franky E. Bedoya-Lora ◽  
John C. Alexander ◽  
Anna Regoutz ◽  
Geoff H. Kelsall

Re-examination of methodologies used for flat band potential determination to help avoid misleading results from the Mott–Schottky approximation.


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