Influence of Temperature on Inelastic Deformation Behavior of A5056 Al-Alloy

2002 ◽  
Vol 2002.2 (0) ◽  
pp. 95-96
Author(s):  
Kenji KANEKO ◽  
Norio WAKASA
2015 ◽  
Vol 90 ◽  
pp. 420-433 ◽  
Author(s):  
M. Esmaily ◽  
M. Shahabi-Navid ◽  
J.-E. Svensson ◽  
M. Halvarsson ◽  
L. Nyborg ◽  
...  

Author(s):  
S Nanthakumar ◽  
D Rajenthirakumar ◽  
S Avinashkumar

Micro scale deformational behavior of metals is improved upon increasing the room temperature. Further, the drawbacks of micro forming caused by size effects are reduced significantly. In the current work, investigation on the material behavior of copper at elevated temperature ranging from room temperature to 200  ℃ is conducted. On the experimental part, a novel micro extrusion die set assembly has been developed along with temperature assistance, where the specimen is heated within the die assembly to study deformation behavior. When the forming temperature is raised, an enlargement of the forming limits is achieved along with a significant reduction in extrusion force. Further, the flow of material inside the die orifice was more uniform, and the micro pin showed a good replication of the die dimensions with homogeneous material deformation. During the increase of extrusion temperature and lubrication conditions (diamond-like carbon coating), the micro pin is more complete with higher dimensional accuracy and surface finish. The investigation on the influence of temperature showed that there is a reduction in microhardness of samples compared to the hardness of samples extruded at room temperature. However, there is a significant reduction of scattering due to homogenizing effect.


Materials ◽  
2018 ◽  
Vol 11 (2) ◽  
pp. 235 ◽  
Author(s):  
Min Cao ◽  
Li Liu ◽  
Lei Fan ◽  
Zhongfen Yu ◽  
Ying Li ◽  
...  

Author(s):  
T. Geipel ◽  
W. Mader ◽  
P. Pirouz

Temperature affects both elastic and inelastic scattering of electrons in a crystal. The Debye-Waller factor, B, describes the influence of temperature on the elastic scattering of electrons, whereas the imaginary part of the (complex) atomic form factor, fc = fr + ifi, describes the influence of temperature on the inelastic scattering of electrons (i.e. absorption). In HRTEM simulations, two possible ways to include absorption are: (i) an approximate method in which absorption is described by a phenomenological constant, μ, i.e. fi; - μfr, with the real part of the atomic form factor, fr, obtained from Hartree-Fock calculations, (ii) a more accurate method in which the absorptive components, fi of the atomic form factor are explicitly calculated. In this contribution, the inclusion of both the Debye-Waller factor and absorption on HRTEM images of a (Oll)-oriented GaAs crystal are presented (using the EMS software.Fig. 1 shows the the amplitudes and phases of the dominant 111 beams as a function of the specimen thickness, t, for the cases when μ = 0 (i.e. no absorption, solid line) and μ = 0.1 (with absorption, dashed line).


2010 ◽  
Vol 25 (1) ◽  
pp. 93-105 ◽  
Author(s):  
Daniel Żarski ◽  
Dariusz Kucharczyk ◽  
Wojciech Sasinowski ◽  
Katarzyna Targońska ◽  
Andrzej Mamcarz

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