scholarly journals Torsional fatigue tests of sintered silicon nitride at room temperature.

1989 ◽  
Vol 55 (515) ◽  
pp. 1507-1511
Author(s):  
Katsushi SARUKI ◽  
Akira YAMADA
Keyword(s):  
Silicon Nitride ◽  
Room Temperature ◽  
Fatigue Tests ◽  
Torsional Fatigue ◽  
Sintered Silicon

High Temperature Fatigue Properties of Silicon Nitride in Nitrogen Atmosphere

1992 ◽  
Vol 287 ◽  
Author(s):  
Yasuhiro Shigegaki ◽  
Takashi Inamura ◽  
Akihiko Suzuki ◽  
Tadashi Sasa
Keyword(s):  
Silicon Nitride ◽  
Fatigue Behavior ◽  
Cyclic Fatigue ◽  
Nitrogen Atmosphere ◽  
Fatigue Tests ◽  
Fatigue Properties ◽  
Static Fatigue ◽  
Four Point Bending ◽  
Bending Mode ◽  
Sintered Silicon

ABSTRACTCyclic and static fatigue properties of pressure-less sintered silicon nitride were evaluated at 1000° C in air and in nitrogen using four-point bending mode. The data of cyclic fatigue tests or static fatigue tests and the morphology of the fractured surfaces in nitrogen were compared with those in air. The cyclic fatigue behavior was remarkably influenced by the atmosphere, while the static fatigue was less influenced. Crack healing effect due to the oxidation around the crack are thought to be the most probable mechanism to affect the cyclic fatigue rate in air.

Room-Temperature Strength of Sintered Silicon Nitride Subjected to High-Temperature Creep Loading

1994 ◽  
Author(s):  
Yoshizumi Nakasuji ◽  
Hiroyuki Iwasaki ◽  
Hiroaki Sakai
Keyword(s):  
Silicon Nitride ◽  
Room Temperature ◽  
Strength Degradation ◽  
Creep Tests ◽  
Second Stage ◽  
Two Stages ◽  
Creep Loading ◽  
Applied Stresses ◽  
Room Temperature Strength ◽  
Sintered Silicon

Room-temperature strength was evaluated using sintered silicon nitride crept specimens. Creep tests were performed using 4-point bending loading at 1400°C in air. The bending creep tests applied stresses from 100 to 400 MPa for 10−1 to 3×103 hours. For applied stress over 200 MPa, the room-temperature strength of the crept specimen had two stages. In the first stage the strength degraded slowly, and in the second stage the strength degraded rapidly. In the first stage, oxidation caused the strength degradation, since the degradation was similar for the different applied stresses. In the second stage, large creep deformation mainly caused the strength degradation. Early in the stage, creep induced matrix and boundary damage under the oxidation layer caused the degradation. At the end of the stage, cracks induced by creep caused the degradation.

ChemInform Abstract: OXIDATION OF THIN SHEET REACTION-SINTERED SILICON NITRIDE

1978 ◽  
Vol 9 (24) ◽  
Author(s):  
J. B. WARBURTON ◽  
J. E. ANTILL ◽  
R. W. M. HAWES
Keyword(s):  
Silicon Nitride ◽  
Thin Sheet ◽  
Sintered Silicon
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