Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer
1980 ◽
Vol 63
(1-2)
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pp. 102-103
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2013 ◽
Vol 740-742
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pp. 295-300
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2012 ◽
Vol 360
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pp. 189-192
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2013 ◽
Vol 433
(1-3)
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pp. 199-205
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Keyword(s):
2010 ◽
Vol 115
(1)
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pp. 253-256
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