scholarly journals Enhanced Characteristics of Square-Shaped Extended Source TFET Via Silicon Carbide Polytype (3C-SiC) and a Dopant Pocket Layer

2017 ◽  
Vol 33 (3) ◽  
pp. 1083-1089
Author(s):  
Saeid Marjani ◽  
Saeed Khosroabadi ◽  
Seyed Ebrahim Hosseini
Author(s):  
U. S. Ram ◽  
M. Dubey ◽  
G. Singh

AbstractMost of the SiC polytypes known uptil now are found to be based on either of the basic structure 6


2013 ◽  
Vol 740-742 ◽  
pp. 295-300 ◽  
Author(s):  
Massimo Camarda ◽  
Antonino La Magna ◽  
Francesco La Via

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths


2012 ◽  
Vol 360 ◽  
pp. 189-192 ◽  
Author(s):  
Frédéric Mercier ◽  
Shin-ichi Nishizawa

2013 ◽  
Vol 433 (1-3) ◽  
pp. 199-205 ◽  
Author(s):  
E. López-Honorato ◽  
C. Brigden ◽  
R.A. Shatwell ◽  
H. Zhang ◽  
I. Farnan ◽  
...  

1965 ◽  
Vol 18 (1) ◽  
pp. 128-128 ◽  
Author(s):  
A. H. Gomes de Mesquita

1964 ◽  
Vol 17 (1) ◽  
pp. 49-51 ◽  
Author(s):  
G. Singh ◽  
A. R. Verma

2011 ◽  
Vol 45 (3) ◽  
pp. 277-283 ◽  
Author(s):  
D. D. Avrov ◽  
A. V. Bulatov ◽  
S. I. Dorozhkin ◽  
A. O. Lebedev ◽  
Yu. M. Tairov ◽  
...  

2010 ◽  
Vol 115 (1) ◽  
pp. 253-256 ◽  
Author(s):  
Jing Zhou ◽  
Haiming Li ◽  
Linjuan Zhang ◽  
Jie Cheng ◽  
Haifeng Zhao ◽  
...  

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