The aim of the present research is to understand the bouncing dynamic behavior of nano electromechanical (NEM) switches in order to improve the switch performance and reliability. It is well known that bouncing can dramatically degrade the switch performance and life; hence, in the present study, the bouncing dynamics of a cantilever-based NEM switch has been studied in detail. To this end, the repulsive van der Waals force is incorporated into a nano-switch model to capture the contact dynamics. Intermolecular forces, surface effects, and gas rarefication effects were also included in the proposed model. The Euler-Bernoulli beam theory and an approximate approach based on Galerkin’s method have been employed to predict transient dynamic responses. In the present study, performance parameters such as initial contact time, permanent contact time, major bounce height, and the number of bounces, were quantified in the presence of interactive system nonlinearities. The performance parameters were used to investigate the influence of surface effects and rarefication effects on the performance of an electrostatically actuated switch. Recommended operating conditions are suggested to avoid excessive bouncing for these types of NEM switches.
The resistance of the IC to all kinds of radiation is established by various types of integrated circuits with a characteristic structure, the criteria of which are allowed to record single or multiple transformations. The article considers that a significant influence on the suitability of microcircuits in the situation of exposure to ionizing radiation is manifested not by spatial phenomena in silicon, but by surface effects related to the silicon-dielectric distribution line.