Wurtzite SiC Formation in Plastic Deformed 3C and 6H

Single side clamped 3C and 6H single crystal silicon carbide beams were elastic deformed using a special designed deformation stage in an electron microscope and subjected to high temperatures. The structural transitions occurring during the plastic relaxation process were recorded in situ in the electron microscope using reflection high energy electron diffraction in {110} azimuthal direction. For both polytypes, a polytype phase transition into the wurtzite silicon carbide polytype was observed independent on the surface polarity. The critical initial elastic deformation of the polytype phase transition into the wurtzite phase for the cubic silicon carbide polytype is larger compared to the 6H-SiC. This is due to the higher partial dislocation densities needed to transform the cubic modification into the wurtzite phase.

Structural Quality, Polishing and Thermal Stability of 3C-SiC/Si Templates

First objective of present contribution is to supply a compact description of two thickness-dependent characteristics of state of the art as-grown 3C-SiC/Si templates: structural quality and surface morphology. Second objective is to point out the benefits of surface planarization and indicate the temperature limits of thermal treatment that can be applied to polished 3C-SiC/Si templates without deterioration of planarization results. We believe that this kind of overview, based on our long term experience in fabrication of 3C-SiC/Si templates, may be useful for the scientific community working on future applications of cubic silicon carbide polytype.

Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction

In this paper we use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC step-bunched substrates with miscuts towards the <11-20> and <1-100> directions. We find that the preferential 3C conversion observed on <1-100> misoriented substrates could be due to a different step-to-island interaction which enhances island stability and expansion in this specific direction. For this reason 3-4° degrees off step-bunched 6H substrates with miscut towards the <1-100> direction should be the best choice for the stable and reproducible hetero-polytypical growth of high quality cubic epitaxial films.

Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates

In this paper we used three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC substrates with miscuts towards the <11-20> and <1-100> directions. We analyze the grown film for different miscut angles (in the range 2° to 12° degrees) and different growth rates, finding that substrates with miscut of 3-4° degrees towards the <1-100> direction should be the best choice for the growth of high quality cubic epitaxial films, being able to promote, given a suitable pre-growth treatment to induce step bunching, the nucleation of single domain 3C-SiC films.

Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths