Monte Carlo Study of the Hetero-Polytypical Growth of Cubic on Hexagonal Silicon Carbide Polytypes

We use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on misoriented hexagonal (4H and 6H) substrates finding that the growth on misoriented (4°-10° degree off) 6H substrates, with step bunched surfaces, can strongly improve the quality of the cubic epitaxial film promoting 3C single domain growths

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Monte Carlo Study of the early Growth Stages of 3C-SiC on Misoriented <11-20> and <1-100> 6H-SiC Substrates: Role of Step-Island Interaction

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.201 ◽

2015 ◽

Vol 821-823 ◽

pp. 201-204

Author(s):

Massimo Camarda ◽

Antonino La Magna ◽

Francesco La Via

Keyword(s):

Monte Carlo ◽

Kinetic Monte Carlo ◽

Three Dimensional ◽

Monte Carlo Study ◽

Growth Stages ◽

Specific Direction ◽

Kinetic Monte Carlo Simulations ◽

Cubic Silicon Carbide ◽

Silicon Carbide Polytype

In this paper we use three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC step-bunched substrates with miscuts towards the <11-20> and <1-100> directions. We find that the preferential 3C conversion observed on <1-100> misoriented substrates could be due to a different step-to-island interaction which enhances island stability and expansion in this specific direction. For this reason 3-4° degrees off step-bunched 6H substrates with miscut towards the <1-100> direction should be the best choice for the stable and reproducible hetero-polytypical growth of high quality cubic epitaxial films.

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Monte Carlo Study of the Early Growth Stages of 3C-SiC on Misoriented and 6H-Sic Substrates

Materials Science Forum ◽

10.4028/www.scientific.net/msf.778-780.238 ◽

2014 ◽

Vol 778-780 ◽

pp. 238-242 ◽

Cited By ~ 1

Author(s):

Massimo Camarda ◽

Antonino La Magna ◽

Francesco La Via

Keyword(s):

Monte Carlo ◽

Kinetic Monte Carlo ◽

Three Dimensional ◽

Monte Carlo Study ◽

Epitaxial Films ◽

Growth Stages ◽

Kinetic Monte Carlo Simulations ◽

Cubic Silicon Carbide ◽

Sic Films ◽

Silicon Carbide Polytype

In this paper we used three dimensional kinetic Monte Carlo simulations on super-lattices to study the hetero-polytypical growth of cubic silicon carbide polytype (3C-SiC) on hexagonal 6H-SiC substrates with miscuts towards the <11-20> and <1-100> directions. We analyze the grown film for different miscut angles (in the range 2° to 12° degrees) and different growth rates, finding that substrates with miscut of 3-4° degrees towards the <1-100> direction should be the best choice for the growth of high quality cubic epitaxial films, being able to promote, given a suitable pre-growth treatment to induce step bunching, the nucleation of single domain 3C-SiC films.

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A 3-D Kinetic Monte Carlo Study of the Growth of Si Thin Films Using Beams With Varying Angle of Incidence

MRS Proceedings ◽

10.1557/proc-440-413 ◽

1996 ◽

Vol 440 ◽

Author(s):

S.W. Levine ◽

J.R. Engstrom ◽

P. Clancy

Keyword(s):

Monte Carlo ◽

Kinetic Monte Carlo ◽

Three Dimensional ◽

Incident Beam ◽

Monte Carlo Study ◽

Columnar Structure ◽

Layer Growth ◽

Angle Of Incidence ◽

Kinetic Monte Carlo Simulations ◽

Porous Thin Film

AbstractThree-dimensional Kinetic Monte Carlo simulations were used to model the deposition of a hyperthermal molecular beam at varying angles of incidence. The simulations incorporate incident atom-substrate interactions, many layer growth, and attempt to mimic deposition and growth of Si on a Si(100) substrate. At high angles of incidence, the formation of “flake”-like structures are seen. The growth of the flakes follow the same general trends as previous two-dimensional simulations where non-local shadowing produces a porous thin film and the columns grow into the incident beam. Increased substrate temperature increased the widths of the flakes perpendicular to the path of the beam and allowed the grown film to remain defect-free for a time before columnar structure begins.

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Evolution of Extended Defects during Epitaxial Growths: A Monte Carlo Study

Materials Science Forum ◽

10.4028/www.scientific.net/msf.679-680.48 ◽

2011 ◽

Vol 679-680 ◽

pp. 48-54 ◽

Cited By ~ 1

Author(s):

Massimo Camarda ◽

Antonino La Magna ◽

Francesco La Via

Keyword(s):

Monte Carlo ◽

Kinetic Monte Carlo ◽

Three Dimensional ◽

Monte Carlo Study ◽

Perfect Crystal ◽

Extended Defects ◽

Dislocation Loops ◽

Local Growth ◽

Kinetic Monte Carlo Simulations ◽

Deposition Conditions

Three dimensional kinetic Monte Carlo simulations on super-lattices are applied to study the evolution of stacking faults during epitaxial growths. We show that, in the case of misoriented close packed substrates, these defects can either extend throughout the entire epilayer (i.e. extended from the substrate up to the surface) or close in dislocation loops, in dependence of the deposition conditions. We explain this behavior in terms of a surface kinetic competition between these defects and the surrounding crystal: if the local growth rate of the defect is larger compared with that of the perfect crystal the defect will expands, otherwise it will closes. This mechanisms allows to explain several experimental results on homo and hetero epitaxies.

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