Research on shot noise suppression in realistic nano-MOSFETs based on Monte Carlo simulation

2013 ◽  
Vol 43 (7) ◽  
pp. 866-873 ◽  
Author(s):  
XiaoFei JIA ◽  
Liang HE
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Shot Noise ◽  
Noise Suppression ◽  
Shot Noise Suppression

Monte Carlo Simulation of Shot-Noise Suppression in Multiple Tunneling Transport

1998 ◽  
Vol 297-298 ◽  
pp. 129-138
Author(s):  
L. Reggiani ◽  
A. Reklaitis
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Shot Noise ◽  
Noise Suppression ◽  
Shot Noise Suppression ◽  
Tunneling Transport

scholarly journals Monte Carlo Investigation of Shot-noise Suppression in Nondegenerate Ballistic and Diffusive Transport Regimes

2000 ◽  
Vol 53 (1) ◽  
pp. 3 ◽  
Author(s):  
L. Reggiani ◽  
A. Reklaitis ◽  
T. González ◽  
J. Mateos ◽  
D. Pardo ◽  
...  
Keyword(s):  
Monte Carlo ◽  
Active Region ◽  
Inelastic Scattering ◽  
Shot Noise ◽  
Noise Suppression ◽  
Signal To Noise Ratio ◽  
Diffusive Transport ◽  
Poisson Solver ◽  
Diffusive Regime ◽  
Shot Noise Suppression

We review recent theoretical investigations of shot-noise suppression in nondegenerate semiconductor structures surrounded by two contacts acting as thermal reservoirs. Calculations make use of an ensemble Monte Carlo simulator self-consistently coupled with a one-dimensional Poisson solver. By taking the doping of the injecting contacts and the applied voltage as variable parameters, the influence of elastic and inelastic scattering as well as of tunneling between heterostructures in the active region is investigated. In the case of a homogeneous structure at T = 300 K the transition from ballistic to diffusive transport regimes under different contact injecting statistics is analysed and discussed. Provided significant space-charge effects take place inside the active region, long-range Coulomb interaction is found to play an essential role in suppressing shot noise at applied voltages much higher than the thermal value. In the elastic diffusive regime, momentum space dimensionality is found to modify the suppression factor γ, which within numerical uncertainty takes values respectively of about ⅓, ½ and 0·7 in the 3D, 2D and 1D cases. In the inelastic diffusive regime, shot noise is suppressed to the thermal value. In the case of single and multiple barrier non-resonant heterostructures made by GaAs/AlGaAs at 77 K, the mechanism of suppression is identified in the carrier inhibition to come back to the emitter contact after having been reflected from a barrier. This condition is realised in the presence of strong inelastic scattering associated with emission of optical phonons. At increasing applied voltages for a two-barrier structure, shot noise is suppressed up to about a factor of 0·50 in close analogy with the corresponding resonant barrier-diode. For an increasing number of barriers, shot noise is found to be systematically suppressed to a more significant level by following approximately a 1/(N + 1) behaviour, N being the number of barriers. This mechanism of suppression is expected to conveniently improve the signal-to-noise ratio of these devices.

Monte Carlo study of shot noise suppression

1997 ◽  
Vol 82 (6) ◽  
pp. 3161-3163 ◽  
Author(s):  
A. Reklaitis ◽  
L. Reggiani
Keyword(s):  
Monte Carlo ◽  
Shot Noise ◽  
Noise Suppression ◽  
Monte Carlo Study ◽  
Shot Noise Suppression

Monte Carlo study of shot-noise suppression in semiconductor heterostructure diodes

1999 ◽  
Vol 60 (16) ◽  
pp. 11683-11693 ◽  
Author(s):  
A. Reklaitis ◽  
L. Reggiani
Keyword(s):  
Monte Carlo ◽  
Shot Noise ◽  
Noise Suppression ◽  
Monte Carlo Study ◽  
Semiconductor Heterostructure ◽  
Shot Noise Suppression

SUB- AND SUPER-POISSONIAN NOISE IN SI QUANTUM DOTS USING FULLY SELF-CONSISTENT 3D SIMULATION

2012 ◽  
Vol 11 (03) ◽  
pp. 1242006 ◽  
Author(s):  
VINCENT TALBO ◽  
DAMIEN QUERLIOZ ◽  
SYLVIE RETAILLEAU ◽  
PHILIPPE DOLLFUS
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Noise Suppression ◽  
Fano Factor ◽  
Poissonian Noise ◽  
Self Consistent ◽  
3D Monte Carlo ◽  
Counting Statistics ◽  
Si Quantum Dots ◽  
Shot Noise Suppression

The 3D Monte Carlo simulation of an Si dot-based double-tunnel junction shows not only the possibility of shot noise suppression down to the Fano factor of 0.5, but also of super-Poissonian noise. The counting statistics of the tunneling events provides a clear interpretation of the different noise regimes according to the balance between the different tunneling rates involved.

QUANTUM EFFECT ON SHOT NOISE SUPPRESSION IN TRANSPORT THROUGH MICROSTRUCTURES

1991 ◽  
Vol 05 (04) ◽  
pp. 315-322 ◽  
Author(s):  
L.Y. CHEN ◽  
G. LEVINE ◽  
J. YANG ◽  
C.S. TING
Keyword(s):  
Stochastic Process ◽  
Monte Carlo ◽  
Shot Noise ◽  
Electronic Transport ◽  
Finite Time ◽  
Noise Suppression ◽  
Quantum Effect ◽  
Experimental Measurements ◽  
Channel State ◽  
Shot Noise Suppression

A stochastic process with repulsive correlations is proposed to simulate the nonequilibrium electronic transport through microstructures under finite bias voltage. Since an electron needs to stay a finite time τ0 on a channel state while traversing the constriction structure, electrons following within time τ0 cannot get through the same channel state because of the Pauli exclusion. This quantum effect induces a repulsive correlation and suppresses the shot noise. The Monte Carlo results are compared with experimental measurements.

Shot noise suppression from independently tunnelled electrons in heterostructures

1999 ◽  
Vol 14 (2) ◽  
pp. L5-L10 ◽  
Author(s):  
A Reklaitis ◽  
L Reggiani
Keyword(s):  
Shot Noise ◽  
Noise Suppression ◽  
Shot Noise Suppression

Analysis of shot-noise suppression in disordered quantum wires

2003 ◽  
Vol 19 (1-2) ◽  
pp. 107-111 ◽  
Author(s):  
L. Bonci ◽  
G. Fiori ◽  
M. Macucci ◽  
G. Iannaccone ◽  
S. Roddaro ◽  
...  
Keyword(s):  
Shot Noise ◽  
Noise Suppression ◽  
Quantum Wires ◽  
Shot Noise Suppression
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