AbstractA number of experimental techniques were used to characterize structural quality, ultrafast carrier dynamics and deep center properties of low-temperature-grown GaAs doped with Be. GaAs layers grown at 280 °C, doped with the Be concentration from 5×1017 cm-3 to 2×1019 cm-3 and annealed at temperatures between 500 and 800 °C were studied. Electron trapping times in these samples varied from hundreds of femtoseconds to several picoseconds. A non-monotonous electron trapping time dependence on Be doping level is explained by the influence of triple-charged gallium vacancies and single-charged Be-acceptors on the number of ionized As antisite defects.
