Impact of effective mass changes with mole-fraction on the analog/radio frequency benchmarking parameters in junctionless GaxIn1−xAs/GaAs field-effect transistor

In this paper, for the first time, changes in the effective mass (EM) of electron and hole with mole fraction are taken into account for extracting the benchmarking parameters of analog/radio frequency (RF) and high-frequency noise performance of junctionless (JL)-Ga[Formula: see text]In[Formula: see text]As/GaAs via simulation. In the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs structure, considering changes in the effective mass with mole fraction is called a with-EM state, while the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs structure without considering the changes in effective mass with mole fraction is called a without-EM state. The simulation results show that, per [Formula: see text], the maximum transconductance in the with-effective mass (EM) state is [Formula: see text] mS/[Formula: see text]m, which is reduced by 8% compared to the without-EM state. The JL-Ga[Formula: see text]In[Formula: see text]As/GaAs device in the with-EM state has the unity gain cutoff frequency of [Formula: see text] GHz, minimum noise figure of [Formula: see text] db, and available associated gain of [Formula: see text] db. The [Formula: see text] and [Formula: see text] parameters in the with-EM state decreased by 10% and 38%, respectively, compared to the without-EM state. Moreover, [Formula: see text] in the with-EM state increased by 65% compared to the without-EM state. Our simulation results indicated that an increase in electron effective mass with the increased [Formula: see text] can limit the analog/RF frequency and high-frequency noise performance of the JL-Ga[Formula: see text]In[Formula: see text]As/GaAs device.

The Electron Density and Energy States for Nanoclusters of GaAs

The article deals with the choice of clusters based on a more detailed study of the GaAs structure and computer simulation of the physical properties of stable clusters. An instrumental concept of the interspheral space is introduced, which has certain features that distinguish it from the commonly used the lattice of the crystal cores. The parameters describing the forward and reciprocal spaces are determined by quasi-bound states in the corresponding spaces: in forward space—the number and location of the structural elements of the cluster; in the reciprocal space—the electron density and energy values. An approach with the use of the notion of an interspheral space on the structure of GaAs clusters and the results of a computer-analytic study that gives a solution to the equation of an interspheral oscillator is discussed.